Assignee
NONVOLATILE ELECTRONICS INC
US·21 granted patents·1,260 citations·filing 1991–1999
Top patents by PatentIndex Score
21 records- 0196US5831426AMagnetic current sensorNONVOLATILE ELECTRONICS INC·Filed 1996·Granted Nov 3, 1998·177 cites·17 claims
- 0294US5617071AMagnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable massesNONVOLATILE ELECTRONICS INC·Filed 1995·Granted Apr 1, 1997·116 cites·16 claims
- 0393US5892708AMagnetoresistive memory using large fraction of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1998·Granted Apr 6, 1999·85 cites·10 claims
- 0493US5420819AMethod for sensing data in a magnetoresistive memory using large fractions of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1992·Granted May 30, 1995·86 cites·14 claims
- 0593US5251170AOffset magnetoresistive memory structuresNONVOLATILE ELECTRONICS INC·Filed 1991·Granted Oct 5, 1993·92 cites·14 claims
- 0691US5424236AMethod for forming offset magnetoresistive memory structuresNONVOLATILE ELECTRONICS INC·Filed 1993·Granted Jun 13, 1995·72 cites·7 claims
- 0789US5595830AMagnetoresistive structure with alloy layer having two substantially immiscible componentsNONVOLATILE ELECTRONICS INC·Filed 1994·Granted Jan 21, 1997·52 cites·50 claims
- 0889US5569544AMagnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible componentsNONVOLATILE ELECTRONICS INC·Filed 1994·Granted Oct 29, 1996·66 cites·42 claims
- 0988US6021065ASpin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Feb 1, 2000·76 cites·14 claims
- 1087US6300617B1Magnetic digital signal coupler having selected/reversal directions of magnetizationNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Oct 9, 2001·102 cites·41 claims
- 1182US5636159AMagnetoresistive memory using large fractions of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1995·Granted Jun 3, 1997·40 cites·15 claims
- 1279US6275411B1Spin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Aug 14, 2001·29 cites·66 claims
- 1379US5966322AGiant magnetoresistive effect memory cellNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Oct 12, 1999·34 cites·40 claims
- 1479US5949707AGiant magnetoresistive effect memory cellNONVOLATILE ELECTRONICS INC·Filed 1996·Granted Sep 7, 1999·36 cites·45 claims
- 1578US6252390B1Magnetically coupled signal isolatorNONVOLATILE ELECTRONICS INC·Filed 1998·Granted Jun 26, 2001·38 cites·25 claims
- 1675US6168860B1Magnetic structure with stratified layersNONVOLATILE ELECTRONICS INC·Filed 1996·Granted Jan 2, 2001·27 cites·26 claims
- 1771US6147900ASpin dependent tunneling memoryNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Nov 14, 2000·32 cites·24 claims
- 1869US5729137AMagnetic field sensors individualized field reducersNONVOLATILE ELECTRONICS INC·Filed 1996·Granted Mar 17, 1998·32 cites·10 claims
- 1965US6072382ASpin dependent tunneling sensorNONVOLATILE ELECTRONICS INC·Filed 1999·Granted Jun 6, 2000·41 cites·25 claims
- 2059US5768180AMagnetoresistive memory using large fractions of memory cell films for data storageNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Jun 16, 1998·14 cites·22 claims
- 2148US6340886B1Magnetic field sensor with a plurality of magnetoresistive thin-film layers having an end at a common surfaceNONVOLATILE ELECTRONICS INC·Filed 1997·Granted Jan 22, 2002·13 cites·11 claims
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