Assignee
OSHIKA YOSHIKAZU
JP·6 granted patents·1 pending application·8 citations·filing 2006–2011
Top patents by PatentIndex Score
7 records- 0176US8986446B2Si-doped GaAs single crystal ingot and process for producing the same, and Si-doped GaAs single crystal wafer produced from Si-doped GaAs single crystal ingotOSHIKA YOSHIKAZU·Filed 2010·Granted Mar 24, 2015·1 cites·7 claims
- 0266US8581106B2SubmountOSHIKA YOSHIKAZU·Filed 2011·Granted Nov 12, 2013·2 cites·1 claims
- 0357US8472208B2Submount and method of manufacturing the sameOSHIKA YOSHIKAZU·Filed 2006·Granted Jun 25, 2013·1 cites·5 claims
- 0456US8516692B2Solder layer, substrate for device joining utilizing the same and method of manufacturing the substrateOSHIKA YOSHIKAZU·Filed 2007·Granted Aug 27, 2013·2 cites·2 claims
- 0556US8404359B2Solder layer and electronic device bonding substrate and submount using the sameOSHIKA YOSHIKAZU·Filed 2007·Granted Mar 26, 2013·1 cites·3 claims
- 0653US8747579B2Solder layer and device bonding substrate using the same and method for manufacturing such a substrateOSHIKA YOSHIKAZU·Filed 2008·Granted Jun 10, 2014·1 cites·6 claims
- 0737US2009151982A1Metal-ceramic composite substrate and method of its manufactureOSHIKA YOSHIKAZU·Filed 2006·Application pending·0 cites
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