Assignee
OSHIMA YUICHI
JP·8 granted patents·1 pending application·6 citations·filing 2006–2010
Top patents by PatentIndex Score
9 records- 0168US8690636B2Compound semiconductor substrate production methodOSHIMA YUICHI·Filed 2010·Granted Apr 8, 2014·2 cites·13 claims
- 0264US8143702B2Group III-V nitride based semiconductor substrate and method of making sameOSHIMA YUICHI·Filed 2010·Granted Mar 27, 2012·1 cites·17 claims
- 0363US9246049B2Nitride-based semiconductor substrate and semiconductor deviceOSHIMA YUICHI·Filed 2008·Granted Jan 26, 2016·1 cites·8 claims
- 0463US8829651B2Nitride-based semiconductor substrate and semiconductor deviceOSHIMA YUICHI·Filed 2006·Granted Sep 9, 2014·1 cites·4 claims
- 0557US8624356B2Group III nitride semiconductor substrate production method, and group III nitride semiconductor substrateOSHIMA YUICHI·Filed 2009·Granted Jan 7, 2014·1 cites·6 claims
- 0653US8715413B2Method for manufacturing a group III nitride semiconductor crystal and method for manufacturing a group III nitride semiconductor substrateOSHIMA YUICHI·Filed 2010·Granted May 6, 2014·0 cites·19 claims
- 0749US8101939B2GaN single-crystal substrate and method for producing GaN single crystalOSHIMA YUICHI·Filed 2008·Granted Jan 24, 2012·0 cites·15 claims
- 0847US2010028605A1Substrate for epitaxial growthOSHIMA YUICHI·Filed 2008·Application pending·0 cites
- 0942US8592316B2Nitride semiconductor substrate, production method therefor and nitride semiconductor deviceOSHIMA YUICHI·Filed 2010·Granted Nov 26, 2013·0 cites·12 claims
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