Assignee
PAL ROHIT
US·9 granted patents·5 pending applications·17 citations·filing 2007–2012
Top patents by PatentIndex Score
14 records- 0184US8148750B2Transistor device having asymmetric embedded strain elements and related manufacturing methodPAL ROHIT·Filed 2011·Granted Apr 3, 2012·5 cites·9 claims
- 0272US8664066B2Formation of a channel semiconductor alloy by forming a nitride based hard mask layerPAL ROHIT·Filed 2012·Granted Mar 4, 2014·3 cites·20 claims
- 0368US8217463B2Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsPAL ROHIT·Filed 2011·Granted Jul 10, 2012·2 cites·20 claims
- 0466US8293609B2Method of manufacturing a transistor device having asymmetric embedded strain elementsPAL ROHIT·Filed 2012·Granted Oct 23, 2012·1 cites·12 claims
- 0565US8119464B2Fabrication of semiconductors with high-K/metal gate electrodesPAL ROHIT·Filed 2009·Granted Feb 21, 2012·3 cites·10 claims
- 0664US8445964B2Fabrication of semiconductors with high-K/metal gate electrodesPAL ROHIT·Filed 2012·Granted May 21, 2013·2 cites·19 claims
- 0760US8664057B2High-K metal gate electrode structures formed by early cap layer adaptationPAL ROHIT·Filed 2012·Granted Mar 4, 2014·1 cites·20 claims
- 0845US8084828B2Methods for protecting gate stacks during fabrication of semiconductor devices and semiconductor devices fabricated from such methodsPAL ROHIT·Filed 2010·Granted Dec 27, 2011·0 cites·16 claims
- 0945US2008237811A1Method for preserving processing history on a waferPAL ROHIT·Filed 2007·Application pending·0 cites
- 1044US2008248598A1Method and apparatus for determining characteristics of a stressed material using scatterometryPAL ROHIT·Filed 2007·Application pending·0 cites
- 1141US2012235245A1Superior integrity of high-k metal gate stacks by reducing sti divots by depositing a fill material after sti formationPAL ROHIT·Filed 2012·Application pending·0 cites
- 1240US8278165B2Methods for protecting film layers while removing hardmasks during fabrication of semiconductor devicesPAL ROHIT·Filed 2009·Granted Oct 2, 2012·0 cites·19 claims
- 1340US2012295420A1Semiconductor devices with reduced sti topography by using chemical oxide removalPAL ROHIT·Filed 2012·Application pending·0 cites
- 1439US2013115773A1Prevention of ILD Loss in Replacement Gate Technologies by Surface TreatmenPAL ROHIT·Filed 2011·Application pending·0 cites
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