Assignee
PARK BYUNG-LYUL
KR·4 granted patents·70 citations·filing 2010–2012
Top patents by PatentIndex Score
4 records- 0196US8076234B1Semiconductor device and method of fabricating the same including a conductive structure is formed through at least one dielectric layer after forming a via structurePARK BYUNG-LYUL·Filed 2010·Granted Dec 13, 2011·40 cites·19 claims
- 0293US8592310B2Methods of manufacturing a semiconductor devicePARK BYUNG-LYUL·Filed 2011·Granted Nov 26, 2013·18 cites·20 claims
- 0387US9018768B2Integrated circuit having through silicon via structure with minimized deteriorationPARK BYUNG-LYUL·Filed 2012·Granted Apr 28, 2015·10 cites·7 claims
- 0468US8847399B2Semiconductor device and method of fabricating the samePARK BYUNG-LYUL·Filed 2011·Granted Sep 30, 2014·2 cites·16 claims
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