Assignee
PARK CHANHO
US·2 granted patents·1 pending application·1 citations·filing 2006–2012
Top patents by PatentIndex Score
3 records- 0155US8598654B2MOSFET device with thick trench bottom oxidePARK CHANHO·Filed 2011·Granted Dec 3, 2013·1 cites·21 claims
- 0239US2008124870A1Trench Gate FET with Self-Aligned FeaturesPARK CHANHO·Filed 2006·Application pending·0 cites
- 0335US11114559B2Semiconductor device having reduced gate charges and superior figure of meritPARK CHANHO·Filed 2012·Granted Sep 7, 2021·0 cites·16 claims
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