Assignee

PARK HEE SEOK

KR·1 granted patent·23 citations·filing 2007–2007

Technology mixC30B1 H10H1 H10P1

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0187US8536026B2Selective growth method, nitride semiconductor light emitting device and manufacturing method of the samePARK HEE SEOK·Filed 2007·Granted Sep 17, 2013·23 cites·17 claims

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