Assignee
PARK JONG MUN
AT·3 granted patents·4 citations·filing 2008–2011
Top patents by PatentIndex Score
3 records- 0168US8963243B2P-channel LDMOS transistor and method of producing a p-channel LDMOS transistorPARK JONG MUN·Filed 2011·Granted Feb 24, 2015·3 cites·7 claims
- 0251US8969961B2Field-effect transistor and method for producing a field-effect transistorPARK JONG MUN·Filed 2008·Granted Mar 3, 2015·1 cites·17 claims
- 0344US9698257B2Symmetric LDMOS transistor including a well of a first type of conductivity and wells of an opposite second type of conductivityPARK JONG MUN·Filed 2011·Granted Jul 4, 2017·0 cites·7 claims
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