Assignee
PFC DEVICE HOLDINGS LTD
HK·13 granted patents·1 pending application·0 citations·filing 2013–2018
Top patents by PatentIndex Score
14 records- 0161US9905666B2Trench schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2017·Granted Feb 27, 2018·0 cites·8 claims
- 0260US9362350B2MOS P-N junction diode with enhanced response speed and manufacturing method thereofPFC DEVICE HOLDINGS LTD·Filed 2014·Granted Jun 7, 2016·0 cites·3 claims
- 0359US9865700B2MOS P-N junction diode with enhanced response speed and manufacturing method thereofPFC DEVICE HOLDINGS LTD·Filed 2017·Granted Jan 9, 2018·0 cites·8 claims
- 0459US9853120B2Trench Schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2016·Granted Dec 26, 2017·0 cites·8 claims
- 0559US9219170B2Trench schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2014·Granted Dec 22, 2015·0 cites·6 claims
- 0657US9536976B2Trench schottky rectifier device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2015·Granted Jan 3, 2017·0 cites·6 claims
- 0752US9379180B2Super junction for semiconductor device and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2013·Granted Jun 28, 2016·0 cites·4 claims
- 0849US10490626B1Semiconductor device with super junction and process for the samePFC DEVICE HOLDINGS LTD·Filed 2018·Granted Nov 26, 2019·0 cites·7 claims
- 0947US9406745B2Method of manufacturing super junction for semiconductor devicePFC DEVICE HOLDINGS LTD·Filed 2015·Granted Aug 2, 2016·0 cites·8 claims
- 1047US9373728B2Trench MOS PN junction diode structurePFC DEVICE HOLDINGS LTD·Filed 2014·Granted Jun 21, 2016·0 cites·12 claims
- 1143US9520479B1Low-temperature epitaxial method for manufacturing backside field stop layer of insulated gate bipolar transistor (IGBT)PFC DEVICE HOLDINGS LTD·Filed 2016·Granted Dec 13, 2016·0 cites·6 claims
- 1243US9240470B2High-performance reverse-conduction field-stop (RCFS) insulated gate bipolar transistor and method for manufacturing the samePFC DEVICE HOLDINGS LTD·Filed 2014·Granted Jan 19, 2016·0 cites·12 claims
- 1338US9455328B1Low-temperature oxide method for manufacturing backside field stop layer of insulated gate bipolar transistorPFC DEVICE HOLDINGS LTD·Filed 2016·Granted Sep 27, 2016·0 cites·8 claims
- 1435US2017148889A1Metal oxide semiconductor field effect transistor power device with multi gates connectionPFC DEVICE HOLDINGS LTD·Filed 2016·Application pending·0 cites
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