Assignee
POWERCUBESEMI INC
KR·2 granted patents·1 citations·filing 2018–2020
Top patents by PatentIndex Score
2 records- 0173US10720535B2SiC wide trench-type junction barrier Schottky diode and manufacturing method thereforPOWERCUBESEMI INC·Filed 2020·Granted Jul 21, 2020·1 cites·8 claims
- 0247US10629754B2SiC wide trench-type junction barrier Schottky diode and manufacturing method thereforPOWERCUBESEMI INC·Filed 2018·Granted Apr 21, 2020·0 cites·10 claims
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