Assignee

PROWTECH INC

KR·1 granted patent·25 citations·filing 2000–2000

Technology mixC30B1 H10P1

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0177US6750121B1Apparatus and method for forming single crystalline nitride substrate using hydride vapor phase epitaxy and laser beamPROWTECH INC·Filed 2000·Granted Jun 15, 2004·25 cites·6 claims

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