Assignee
RAMDANI JAMAL
US·6 granted patents·1 pending application·67 citations·filing 2010–2012
Top patents by PatentIndex Score
7 records- 0195US8785305B2Backside stress compensation for gallium nitride or other nitride-based semiconductor devicesRAMDANI JAMAL·Filed 2010·Granted Jul 22, 2014·20 cites·20 claims
- 0295US8633094B2GaN high voltage HFET with passivation plus gate dielectric multilayer structureRAMDANI JAMAL·Filed 2011·Granted Jan 21, 2014·29 cites·23 claims
- 0392US8507947B2High quality GaN high-voltage HFETS on siliconRAMDANI JAMAL·Filed 2011·Granted Aug 13, 2013·12 cites·9 claims
- 0483US8624260B2Enhancement-mode GaN MOSFET with low leakage current and improved reliabilityRAMDANI JAMAL·Filed 2010·Granted Jan 7, 2014·5 cites·20 claims
- 0564US8723296B2Stress compensation for large area gallium nitride or other nitride-based structures on semiconductor substratesRAMDANI JAMAL·Filed 2010·Granted May 13, 2014·1 cites·17 claims
- 0647US8802516B2Normally-off gallium nitride-based semiconductor devicesRAMDANI JAMAL·Filed 2010·Granted Aug 12, 2014·0 cites·13 claims
- 0741US2014077266A1Heterostructure Transistor with Multiple Gate Dielectric LayersRAMDANI JAMAL·Filed 2012·Application pending·0 cites
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