Assignee
REN NA
US·2 granted patents·6 pending applications·6 citations·filing 2018–2020
Top patents by PatentIndex Score
8 records- 0183US10529867B1Schottky diode having double p-type epitaxial layers with high breakdown voltage and surge current capabilityREN NA·Filed 2018·Granted Jan 7, 2020·6 cites·14 claims
- 0252US2021098579A1Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layersREN NA·Filed 2020·Application pending·0 cites
- 0348US2020027953A1Schottky diode with high breakdown voltage and surge current capability using double p-type epitaxial layersREN NA·Filed 2019·Application pending·0 cites
- 0444US10672883B2Mixed trench junction barrier Schottky diode and method fabricating sameREN NA·Filed 2018·Granted Jun 2, 2020·0 cites·17 claims
- 0538US2020321478A1Trench junction barrier schottky diode with voltage reducing layer and manufacturing method thereofREN NA·Filed 2019·Application pending·0 cites
- 0637US2020321477A1Multi-schottky-layer trench junction barrier schottky diode and manufacturing method thereofREN NA·Filed 2019·Application pending·0 cites
- 0734US2018358478A1Trench type junction barrier schottky diode with voltage reducing layer and manufacturing method thereofREN NA·Filed 2018·Application pending·0 cites
- 0834US2018358477A1Trench type junction barrier schottky diode and manufacturing method thereofREN NA·Filed 2018·Application pending·0 cites
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