Assignee
SAMSUNG JAPAN CORP
JP·1 granted patent·1 pending application·0 citations·filing 2003–2005
Top patents by PatentIndex Score
2 records- 0141US7479656B2Compound semiconductor formed from a heated portion of a layered structure including rare earth transition metalSAMSUNG JAPAN CORP·Filed 2005·Granted Jan 20, 2009·0 cites·25 claims
- 0233US2006250916A1Optical recording/reproducing method and optical recording mediumSAMSUNG JAPAN CORP·Filed 2003·Application pending·0 cites
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