Assignee
SANDISK TECHNOLOGIES INC
US·1,458 granted patents·318 pending applications·19,281 citations·filing 2002–2025
Top patents by PatentIndex Score
1,776 records- 0199US10133490B2System and method for managing extended maintenance scheduling in a non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 20, 2018·96 cites·20 claims
- 0299US10120613B2System and method for rescheduling host and maintenance operations in a non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Nov 6, 2018·94 cites·16 claims
- 0399US9778855B2System and method for precision interleaving of data writes in a non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·90 cites·20 claims
- 0499US9768192B1Three-dimensional memory device containing annular etch-stop spacer and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Sep 19, 2017·56 cites·10 claims
- 0599US9728551B1Multi-tier replacement memory stack structure integration schemeSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 8, 2017·78 cites·36 claims
- 0699US9673213B1Three dimensional memory device with peripheral devices under dummy dielectric layer stack and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jun 6, 2017·77 cites·23 claims
- 0799US9659956B1Three-dimensional memory device containing source select gate electrodes with enhanced electrical isolationSANDISK TECHNOLOGIES INC·Filed 2016·Granted May 23, 2017·108 cites·13 claims
- 0899US9627399B2Three-dimensional memory device with metal and silicide control gatesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 18, 2017·41 cites·25 claims
- 0999US9595535B1Integration of word line switches with word line contact via structuresSANDISK TECHNOLOGIES INC·Filed 2016·Granted Mar 14, 2017·56 cites·10 claims
- 1099US9449985B1Memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·41 cites·29 claims
- 1199US9449982B2Method of making a vertical NAND device using a sacrificial layer with air gap and sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·71 cites·20 claims
- 1299US9425299B1Three-dimensional memory device having a heterostructure quantum well channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 23, 2016·50 cites·22 claims
- 1399US9406693B1Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memorySANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 2, 2016·66 cites·22 claims
- 1499US9311970B2Systems and methods of storing dataSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 12, 2016·183 cites·20 claims
- 1599US9230987B2Multilevel memory stack structure and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 5, 2016·126 cites·38 claims
- 1699US9230976B2Method of making ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·42 cites·20 claims
- 1799US9230974B1Methods of selective removal of blocking dielectric in NAND memory stringsSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·56 cites·39 claims
- 1899US9230973B2Methods of fabricating a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·207 cites·28 claims
- 1999US9230980B2Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·50 cites·12 claims
- 2099US9124300B2Error correction coding in non-volatile memorySANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 1, 2015·186 cites·32 claims
- 2199US9023719B2High aspect ratio memory hole channel contact formationSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 5, 2015·137 cites·36 claims
- 2299US8946023B2Method of making a vertical NAND device using sequential etching of multilayer stacksSANDISK TECHNOLOGIES INC·Filed 2013·Granted Feb 3, 2015·96 cites·20 claims
- 2399US8946810B2Ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 3, 2015·43 cites·12 claims
- 2499US8947931B1Memory moduleSANDISK TECHNOLOGIES INC·Filed 2014·Granted Feb 3, 2015·87 cites·20 claims
- 2599US8884357B2Vertical NAND and method of making thereof using sequential stack etching and landing padSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 11, 2014·106 cites·24 claims
- 2699US8878278B2Compact three dimensional vertical NAND and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2013·Granted Nov 4, 2014·136 cites·24 claims
- 2799US8829591B2Ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 9, 2014·45 cites·20 claims
- 2899US8765543B2Method of making an ultrahigh density vertical NAND memory device with shielding wingsSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 1, 2014·53 cites·9 claims
- 2999US8461000B2Method of making ultrahigh density vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2012·Granted Jun 11, 2013·69 cites·11 claims
- 3099US8375146B2Ring bus structure and its use in flash memory systemsSANDISK TECHNOLOGIES INC·Filed 2004·Granted Feb 12, 2013·321 cites·37 claims
- 3199US8349681B2Ultrahigh density monolithic, three dimensional vertical NAND memory deviceSANDISK TECHNOLOGIES INC·Filed 2010·Granted Jan 8, 2013·290 cites·13 claims
- 3299US8045391B2Non-volatile memory and method with improved sensing having bit-line lockout controlSANDISK TECHNOLOGIES INC·Filed 2010·Granted Oct 25, 2011·419 cites·28 claims
- 3399US7984084B2Non-volatile memory with scheduled reclaim operationsSANDISK TECHNOLOGIES INC·Filed 2005·Granted Jul 19, 2011·130 cites·7 claims
- 3498US10223028B2Failed bit count memory analyticsSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 5, 2019·38 cites·21 claims
- 3598US9859422B2Field effect transistor with elevated active regions and methods of manufacturing the sameSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 2, 2018·32 cites·12 claims
- 3698US9853043B2Method of making a multilevel memory stack structure using a cavity containing a sacrificial fill materialSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 26, 2017·49 cites·17 claims
- 3798US9842907B2Memory device containing cobalt silicide control gate electrodes and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·27 cites·9 claims
- 3898US9842851B2Three-dimensional memory devices having a shaped epitaxial channel portionSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 12, 2017·28 cites·12 claims
- 3998US9793139B2Robust nucleation layers for enhanced fluorine protection and stress reduction in 3D NAND word linesSANDISK TECHNOLOGIES INC·Filed 2016·Granted Oct 17, 2017·38 cites·26 claims
- 4098US9780182B2Molybdenum-containing conductive layers for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·32 cites·16 claims
- 4198US9721663B1Word line decoder circuitry under a three-dimensional memory arraySANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 1, 2017·55 cites·33 claims
- 4298US9721963B1Three-dimensional memory device having a transition metal dichalcogenide channelSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 1, 2017·50 cites·31 claims
- 4398US9698152B2Three-dimensional memory structure with multi-component contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jul 4, 2017·35 cites·13 claims
- 4498US9698223B2Memory device containing stress-tunable control gate electrodesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jul 4, 2017·26 cites·27 claims
- 4598US9698153B2Vertical NAND and method of making thereof using sequential stack etching and self-aligned landing padSANDISK TECHNOLOGIES INC·Filed 2016·Granted Jul 4, 2017·54 cites·11 claims
- 4698US9691781B1Vertical resistor in 3D memory device with two-tier stackSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 27, 2017·39 cites·20 claims
- 4798US9679906B2Three-dimensional memory devices containing memory block bridgesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 13, 2017·35 cites·18 claims
- 4898US9659955B1Crystalinity-dependent aluminum oxide etching for self-aligned blocking dielectric in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 23, 2017·46 cites·19 claims
- 4998US9646975B2Lateral stack of cobalt and a cobalt-semiconductor alloy for control gate electrodes in a memory structureSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 9, 2017·37 cites·17 claims
- 5098US9646981B2Passive devices for integration with three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted May 9, 2017·53 cites·12 claims
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