Assignee
SEMICONDUCTOR MFG INT SHANGHAI CORP
CN·1,060 granted patents·113 pending applications·786 citations·filing 2012–2025
Top patents by PatentIndex Score
1,173 records- 0197US9711529B23D NAND device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jul 18, 2017·32 cites·15 claims
- 0296US11637092B2Semiconductor structure and forming method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Apr 25, 2023·4 cites·12 claims
- 0394US10714343B1Semiconductor structure and method for forming sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Jul 14, 2020·13 cites·21 claims
- 0493US12051737B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Jul 30, 2024·2 cites·20 claims
- 0593US10573563B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Feb 25, 2020·9 cites·15 claims
- 0693US9911833B2Semiconductor structures and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Mar 6, 2018·9 cites·20 claims
- 0793US9640427B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted May 2, 2017·10 cites·20 claims
- 0892US10553592B2Fabrication method of a semiconductor structure by a gate cutting process with multiple sidewall spacers formation in a dummy gate openingSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Feb 4, 2020·6 cites·17 claims
- 0992US9923027B2Structure and method for memory cell arraySEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Mar 20, 2018·11 cites·20 claims
- 1092US9721806B2LDMOS device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Aug 1, 2017·8 cites·17 claims
- 1192US9711502B2Double-side process silicon MOS and passive devices for RF front-end modulesSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Jul 18, 2017·12 cites·12 claims
- 1292US9634087B1FinFET and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Apr 25, 2017·10 cites·16 claims
- 1392US9608061B2Fin field-effct transistorsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Mar 28, 2017·9 cites·10 claims
- 1491US11881480B2Semiconductor structure and method of forming semiconductor structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Jan 23, 2024·2 cites·20 claims
- 1591US11569131B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Jan 31, 2023·2 cites·15 claims
- 1691US11271088B2Semiconductor structure with protection layerSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Mar 8, 2022·2 cites·13 claims
- 1791US10573752B2Semiconductor device manufacturing method including doping from a diffused layerSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Feb 25, 2020·5 cites·16 claims
- 1891US9799676B2Semiconductor device, FinFET transistor and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Oct 24, 2017·8 cites·14 claims
- 1991US9450075B2Semiconductor device and manufacturing method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Sep 20, 2016·10 cites·13 claims
- 2090US11688798B2Semiconductor structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Jun 27, 2023·2 cites·18 claims
- 2190US10249574B2Method for manufacturing a seal ring structure to avoid delamination defectSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Apr 2, 2019·6 cites·13 claims
- 2290US10177145B2Semiconductor structures and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Jan 8, 2019·6 cites·20 claims
- 2389US11322399B2Semiconductor structure and formation method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted May 3, 2022·2 cites·13 claims
- 2489US11257927B2Semiconductor structure and forming method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Feb 22, 2022·2 cites·20 claims
- 2589US10354993B2Electrostatic discharge protection structure and fabricating method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Jul 16, 2019·4 cites·19 claims
- 2689US9613868B2Fin field-effect transistors and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Apr 4, 2017·11 cites·18 claims
- 2788US10153095B2Ultra-capacity batterySEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Dec 11, 2018·3 cites·11 claims
- 2888US9978677B2Contact via structure and fabricating method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted May 22, 2018·6 cites·20 claims
- 2988US9978749B2Method to improve device performance for FinFETSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted May 22, 2018·5 cites·20 claims
- 3088US9905465B2Semiconductor structure and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Feb 27, 2018·6 cites·15 claims
- 3188US9721892B2Method for improving adhesion between porous low k dielectric and barrier layerSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Aug 1, 2017·5 cites·13 claims
- 3288US9715987B2Semiconductor device and related manufacturing methodSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2014·Granted Jul 25, 2017·6 cites·12 claims
- 3387US12328904B2Semiconductor structure and forming method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2022·Granted Jun 10, 2025·1 cites·10 claims
- 3487US10586859B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Mar 10, 2020·6 cites·17 claims
- 3587US9923100B2Flash memory structure and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Mar 20, 2018·5 cites·14 claims
- 3687US9418763B2Memory array, memory device, and methods for reading and operating the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Aug 16, 2016·9 cites·20 claims
- 3786US11508726B2Semiconductor structure with gate contactSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Nov 22, 2022·2 cites·5 claims
- 3886US11164860B2Electrostatic discharge protection circuit and electronic device thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2020·Granted Nov 2, 2021·2 cites·11 claims
- 3986US10566421B2Method for manufacturing a BJT FINFET deviceSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Feb 18, 2020·3 cites·20 claims
- 4086US10382040B2High voltage level shifting (HVLS) circuit and related semiconductor devicesSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2018·Granted Aug 13, 2019·7 cites·16 claims
- 4186US10374065B2Method and device for compound semiconductor fin structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Aug 6, 2019·3 cites·15 claims
- 4286US10269927B2Semiconductor structures and fabrication methods thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2016·Granted Apr 23, 2019·5 cites·19 claims
- 4386US10157919B2Device for a FinFETSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Dec 18, 2018·5 cites·6 claims
- 4486US10121700B2Semiconductor device and fabrication method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted Nov 6, 2018·4 cites·16 claims
- 4586US9502569B2FinFET structure and manufacture methodSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Nov 22, 2016·4 cites·7 claims
- 4686US9463975B2MEMS capacitive pressure sensorsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2015·Granted Oct 11, 2016·3 cites·11 claims
- 4785US11538686B2Semiconductor structure and method for forming the sameSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2021·Granted Dec 27, 2022·2 cites·13 claims
- 4885US10937896B2Device for compound semiconductor Fin structureSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Mar 2, 2021·2 cites·19 claims
- 4985US10872971B1Semiconductor structure and formation method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2019·Granted Dec 22, 2020·3 cites·11 claims
- 5085US10658210B2Apparatus and method for detecting overlay mark with bright and dark fieldsSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2017·Granted May 19, 2020·7 cites·17 claims
Showing the top 50 of 1,173 patent records by PatentIndex Score.
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