Assignee

SGS THOMSON MICROELLECTRONICS

IT·1 granted patent·3 citations·filing 1988–1988

Technology mixG11C1 H10B1 H10D1

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0126US4896295AEprom memory cell with two symmetrical half-cells and separate floating gatesSGS THOMSON MICROELLECTRONICS·Filed 1988·Granted Jan 23, 1990·3 cites·2 claims

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