Assignee
SHANGHAI HUAHONG NEC ELECT CO
CN·23 granted patents·6 pending applications·38 citations·filing 2005–2013
Top patents by PatentIndex Score
29 records- 0186US9000516B2Super-junction device and method of forming the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Apr 7, 2015·8 cites·17 claims
- 0284US8707237B2Method of inserting dummy patternsSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Apr 22, 2014·9 cites·5 claims
- 0375US8378457B2Silicon-germanium heterojunction bipolar transistorSHANGHAI HUAHONG NEC ELECT CO·Filed 2011·Granted Feb 19, 2013·4 cites·12 claims
- 0471US8895404B2Method of back-side patterningSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Nov 25, 2014·3 cites·11 claims
- 0568US9123803B2Semiconductor device and method for fabricating the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 1, 2015·3 cites·2 claims
- 0666US8803279B2Structure for picking up a collector and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Aug 12, 2014·2 cites·15 claims
- 0765US8759880B2Ultra-high voltage SIGE HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jun 24, 2014·2 cites·13 claims
- 0865US8748238B2Ultra high voltage SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jun 10, 2014·2 cites·11 claims
- 0961US9130003B2Structure for picking up a collector and method of manufacturing the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 8, 2015·1 cites·10 claims
- 1061US9059277B2RF LDMOS device and fabrication method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jun 16, 2015·2 cites·13 claims
- 1160US8742538B2SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jun 3, 2014·1 cites·5 claims
- 1256US9136374B2Method of fabricating P-type surface-channel LDMOS device with improved in-plane uniformitySHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 15, 2015·1 cites·15 claims
- 1349US9086545B2Silicon-based optical fiber clamp and methods of fabricating the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jul 21, 2015·0 cites·15 claims
- 1447US8816400B2SiGe HBT having deep pseudo buried layer and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Aug 26, 2014·0 cites·16 claims
- 1546US8779473B2SiGe HBT device and manufacturing method of the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jul 15, 2014·0 cites·9 claims
- 1643US8785977B2High speed SiGe HBT and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jul 22, 2014·0 cites·11 claims
- 1742US9029948B2LDMOS device with step-like drift region and fabrication method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted May 12, 2015·0 cites·16 claims
- 1841US8866189B2Silicon-germanium heterojunction bipolar transistor and manufacturing method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Oct 21, 2014·0 cites·16 claims
- 1941US8772125B2Method of double-sided patterningSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Jul 8, 2014·0 cites·11 claims
- 2041US8513142B2Method of manufacturing non-photosensitive polyimide passivation layerSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Granted Aug 20, 2013·0 cites·15 claims
- 2141US2013113104A1Structure for picking up a buried layer and method thereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Application pending·0 cites
- 2240US8829650B2Zener diode in a SiGe BiCMOS process and method of fabricating the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Sep 9, 2014·0 cites·9 claims
- 2340US2013234201A1Field stop structure, reverse conducting igbt semiconductor device and methods for manufacturing the sameSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Application pending·0 cites
- 2440US2013196491A1Method of preventing dopant from diffusing into atmosphere in a bicmos processSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Application pending·0 cites
- 2536US2013130486A1Method of forming silicide layersSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Application pending·0 cites
- 2635US8853771B2Superjunction deviceSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Oct 7, 2014·0 cites·11 claims
- 2733US2013099288A1SiGe HBT and Manufacturing Method ThereofSHANGHAI HUAHONG NEC ELECT CO·Filed 2012·Application pending·0 cites
- 2830US8749413B2Digital correction circuit for a pipelined analog-to-digital converterSHANGHAI HUAHONG NEC ELECT CO·Filed 2013·Granted Jun 10, 2014·0 cites·3 claims
- 2930US2006022255A1Multi-oxide OTP deviceSHANGHAI HUAHONG NEC ELECT CO·Filed 2005·Application pending·0 cites
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