Assignee

SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS

CN·48 granted patents·19 pending applications·63 citations·filing 2012–2025

Technology mixH01L24 H10P14 H10N13 C30B12 H10D11 C23C9

Top patents by PatentIndex Score

67 records

0195US9954158B2Method and device for reducing extrinsic dark count of nanowire single photon detector comprising a multi-layer film filterSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2014·Granted Apr 24, 2018·42 cites·9 claims
0291US11493468B2Method for preparing nitrogen oxide gas sensor based on sulfur-doped grapheneSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Granted Nov 8, 2022·5 cites·11 claims
0379US10253428B2Local carbon-supply device and method for preparing wafer-level graphene single crystal by local carbon supplySHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2015·Granted Apr 9, 2019·2 cites·20 claims
0479US9570294B2Preparation method of graphene nanoribbon on h-BNSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2015·Granted Feb 14, 2017·4 cites·15 claims
0576US11881855B2Superconducting integrated circuit design method based on placement and routing by different-layer JTLsSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2021·Granted Jan 23, 2024·1 cites·7 claims
0671US9741919B2Nano-scale superconducting quantum interference device and manufacturing method thereofSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2014·Granted Aug 22, 2017·2 cites·11 claims
0771US9684094B2Photonic crystal supporting high frequency sensitivity self-collimation phenomenon and design method and use thereofSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2014·Granted Jun 20, 2017·3 cites·5 claims
0866US10624200B2UndulatorSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2015·Granted Apr 14, 2020·2 cites·10 claims
0965US11352713B2Heat shield structure for single crystal production furnace and single crystal production furnaceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Granted Jun 7, 2022·0 cites·18 claims
1062US11774433B2Method for characterizing graphene on platinum substrateSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2022·Granted Oct 3, 2023·0 cites·9 claims
1161US10539633B2Ultrahigh resolution magnetic resonance imaging method and apparatusSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2014·Granted Jan 21, 2020·1 cites·15 claims
1259US11560315B2Graphene structure having graphene bubbles and preparation method for the sameSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2018·Granted Jan 24, 2023·0 cites·16 claims
1358US11380834B2Method related to tuning the performance of superconducting nanowire single photon detector via ion implantationSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2018·Granted Jul 5, 2022·0 cites·10 claims
1458US10858728B2Phase-change type vanadium oxide material and preparation method thereforSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2016·Granted Dec 8, 2020·0 cites·14 claims
1556US10908107B2Nitrogen oxide gas sensor based on sulfur doped graphene and preparation method thereofSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2016·Granted Feb 2, 2021·0 cites·18 claims
1655US2024141547A1Preparation method of p-type high-resistance and ultra-high-resistance czochralski monocrystalline silicon substrateSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2023·Application pending·0 cites
1754US12399318B2Micro-nano structure sensitive to laser beam in specific directionSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Granted Aug 26, 2025·0 cites·5 claims
1854US12227419B2Method for preparing patterned grapheneSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2021·Granted Feb 18, 2025·0 cites·10 claims
1954US12209311B2High-throughput vapor deposition apparatus and vapor deposition methodSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Granted Jan 28, 2025·0 cites·7 claims
2054US2026006814A1Single-crystalline al2o3 dielectric compatible with two-dimensional materials and integrated device thereofSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2025·Application pending·0 cites
2153US11679978B2Method for preparing multi-layer hexagonal boron nitride filmSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Granted Jun 20, 2023·0 cites·13 claims
2253US10679697B2Read circuit of storage class memory with a read reference circuit, having same bit line parasitic parameters and same read transmission gate parasitic parameters as memorySHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2016·Granted Jun 9, 2020·1 cites·14 claims
2353US2022002903A1Heat shield device for single crystal production furnace, control method thereof and single crystal production furnaceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Application pending·0 cites
2452US12442745B2Method for measuring activation energy of catalystSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2021·Granted Oct 14, 2025·0 cites·9 claims
2552US2022002899A1Heat shield for monocrystalline silicon growth furnace and monocrystalline silicon growth furnaceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Application pending·0 cites
2652US2025080082A1Bulk acoustic wave resonator and preparation method thereofSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2024·Application pending·0 cites
2750US11788956B2Terahertz spectrum measurement system and method for analyzing a terahertz spectrum of a substanceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Granted Oct 17, 2023·0 cites·9 claims
2850US10928304B2Method for adjusting and controlling boundary of grapheneSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2018·Granted Feb 23, 2021·0 cites·13 claims
2949US11402266B2Method and system for improving counting rate of superconducting nanowire single photon detectorSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2018·Granted Aug 2, 2022·0 cites·9 claims
3049US9741568B2Sulfur doping method for grapheneSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2014·Granted Aug 22, 2017·0 cites·9 claims
3147US12593626B2Method for preparing silicon-on-insulatorSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2023·Granted Mar 31, 2026·0 cites·11 claims
3247US2022005766A1Composite heat insulation structure for monocrystalline silicon growth furnace and monocrystalline silicon growth furnaceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Application pending·0 cites
3346US12066643B2Electromagnetic absorption metamaterialSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2018·Granted Aug 20, 2024·0 cites·11 claims
3446US2025040151A1Switch device and memorySHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2022·Application pending·0 cites
3545US11876340B2LaserSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Granted Jan 16, 2024·0 cites·10 claims
3645US2023137992A1Method for improving the surface roughness of a silicon-on-insulator waferSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2022·Application pending·0 cites
3745US2023138958A1Method for treating a wafer surfaceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2022·Application pending·0 cites
3844US9601337B2Manufacturing method of graphene modulated high-K oxide and metal gate MOS deviceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2014·Granted Mar 21, 2017·0 cites·8 claims
3943US12453119B2Gallium oxide semiconductor structure, vertical gallium oxide-based power device, and preparation methodSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Granted Oct 21, 2025·0 cites·14 claims
4043US12315543B2Cryogenic memory cell and memory deviceSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Granted May 27, 2025·0 cites·9 claims
4143US2023276638A1Selector material, selector unit and preparation method thereof, and memory structureSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Application pending·0 cites
4242US2025199378A1Terahertz dual-comb spectrum stabilization systemSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2022·Application pending·0 cites
4342US2022328761A1Phase change material, phase change memory cell and preparation method thereforSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Application pending·0 cites
4441US9476906B2Capacitive acceleration sensor with an H-shaped beam and preparation method thereofSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2012·Granted Oct 25, 2016·0 cites·8 claims
4539US11955373B2Gallium oxide semiconductor structure and preparation method thereforSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Granted Apr 9, 2024·0 cites·10 claims
4639US11804821B2High-frequency surface acoustic wave resonator and method for making the sameSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2020·Granted Oct 31, 2023·0 cites·6 claims
4739US10770556B2Fluorinated graphene passivated AlGaN/GaN-based HEMT device and manufacturing methodSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2016·Granted Sep 8, 2020·0 cites·11 claims
4839US10017878B2Growth method of grapheneSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2015·Granted Jul 10, 2018·0 cites·8 claims
4939US9741533B2Image type electron spin polarimeterSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2013·Granted Aug 22, 2017·0 cites·15 claims
5038US11796738B2Temperature-insensitive Mach-Zehnder interferometerSHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS·Filed 2019·Granted Oct 24, 2023·0 cites·9 claims

Showing the top 50 of 67 patent records by PatentIndex Score.

Join the waitlist — get patent alerts

Get an alert when SHANGHAI INST MICROSYSTEM & INFORMATION TECH CAS files or is granted a new patent.

We store only your email — no account needed. See our privacy policy.

Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →