Assignee
SHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD
CN·4 granted patents·5 pending applications·0 citations·filing 2013–2024
Top patents by PatentIndex Score
9 records- 0169US2024248401A1Resin and 193 nm dry photoresist containing same, and preparation method therefor and use thereofSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2024·Application pending·0 cites
- 0256US2024351979A1Polyonium salt photoacid generator for arf light source dry lithography, preparation method therefor and application thereofSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2021·Application pending·0 cites
- 0354US2025013149A1Additive for 193 nm dry photoresist and preparation method for and application of additiveSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2021·Application pending·0 cites
- 0448US2025021002A1Bottom anti-reflective coating for deep ultraviolet lithography, preparation method therefor and use thereofSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2021·Application pending·0 cites
- 0546US11549086B2Cleaning agent and preparation method and use thereofSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2017·Granted Jan 10, 2023·0 cites·13 claims
- 0640US9856572B2Additive for reducing voids after annealing of copper plating with through silicon viaSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2013·Granted Jan 2, 2018·0 cites·8 claims
- 0737US9915005B2Additive C capable of changing microvia-filling method by TSV copper plating, and electroplating solution containing sameSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2013·Granted Mar 13, 2018·0 cites·8 claims
- 0835US2016190007A1A method for microvia filling by copper electroplating with tsv technology for 3d copper interconnection at high aspect ratioSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2013·Application pending·0 cites
- 0932US11332471B2Leveling agent, metal plating composition containing same, preparation method therefor and use thereofSHANGHAI SINYANG SEMICONDUCTOR MAT CO LTD·Filed 2017·Granted May 17, 2022·0 cites·14 claims
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