Assignee
SHIN DONG-SUK
KR·19 granted patents·6 pending applications·47 citations·filing 2006–2015
Top patents by PatentIndex Score
25 records- 0192US9257520B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Feb 9, 2016·7 cites·9 claims
- 0289US9214530B2Methods of forming semiconductor devices including a stressor in a recessSHIN DONG-SUK·Filed 2013·Granted Dec 15, 2015·6 cites·30 claims
- 0389US9129952B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2013·Granted Sep 8, 2015·8 cites·30 claims
- 0488US8207772B2Duty detection circuit and duty cycle correction circuit including the sameSHIN DONG-SUK·Filed 2010·Granted Jun 26, 2012·12 cites·20 claims
- 0576US8067968B2Locking state detector and DLL circuit having the sameSHIN DONG-SUK·Filed 2010·Granted Nov 29, 2011·4 cites·8 claims
- 0674US8508274B2Duty correction circuitSHIN DONG SUK·Filed 2011·Granted Aug 13, 2013·5 cites·26 claims
- 0773US9537009B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Jan 3, 2017·1 cites·30 claims
- 0865US8207594B2Semiconductor integrated circuit deviceSHIN DONG SUK·Filed 2010·Granted Jun 26, 2012·2 cites·14 claims
- 0964US8723290B2Electrical fuse deviceSHIN DONG-SUK·Filed 2012·Granted May 13, 2014·1 cites·8 claims
- 1060US8624629B2Phase difference quantization circuitSHIN DONG-SUK·Filed 2012·Granted Jan 7, 2014·1 cites·4 claims
- 1157US9520497B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Dec 13, 2016·0 cites·30 claims
- 1257US9397216B2Semiconductor devices including a stressor in a recess and methods of forming the sameSHIN DONG-SUK·Filed 2015·Granted Jul 19, 2016·0 cites·20 claims
- 1352US2009224287A1Semiconductor device having a locally buried insulation layerSHIN DONG-SUK·Filed 2009·Application pending·0 cites
- 1451US8198702B2Electrical fuse deviceSHIN DONG-SUK·Filed 2011·Granted Jun 12, 2012·0 cites·11 claims
- 1549US8633747B2Synchronization circuitSHIN DONG SUK·Filed 2011·Granted Jan 21, 2014·0 cites·23 claims
- 1649US2010081246A1Method of manufacturing a semiconductorSHIN DONG-SUK·Filed 2009·Application pending·0 cites
- 1748US8741710B2Methods of fabricating semiconductor devices using a plasma process with non-silane gas including deuteriumSHIN DONG-SUK·Filed 2008·Granted Jun 3, 2014·0 cites·16 claims
- 1846US2011136311A1Semiconductor device having a locally buried insulation layer and method of manufacturing the semiconductor deviceSHIN DONG-SUK·Filed 2011·Application pending·0 cites
- 1945US2008166854A1Semiconductor devices including trench isolation structures and methods of forming the sameSHIN DONG-SUK·Filed 2008·Application pending·0 cites
- 2044US8390353B2Duty cycle correction circuitSHIN DONG SUK·Filed 2011·Granted Mar 5, 2013·0 cites·20 claims
- 2142US8450125B2Methods of evaluating epitaxial growth and methods of forming an epitaxial layerSHIN DONG-SUK·Filed 2011·Granted May 28, 2013·0 cites·18 claims
- 2241US8748299B2Semiconductor devices having an epitaxial layer on active regions and shallow trench isolation regionsSHIN DONG-SUK·Filed 2010·Granted Jun 10, 2014·0 cites·17 claims
- 2340US2007059898A1Semiconductor devices including trench isolation structures and methods of forming the sameSHIN DONG-SUK·Filed 2006·Application pending·0 cites
- 2437US8278985B2Synchronization circuitSHIN DONG SUK·Filed 2010·Granted Oct 2, 2012·0 cites·13 claims
- 2536US2010171182A1Method of forming a semiconductor device having selective stress relaxation of etch stop layerSHIN DONG-SUK·Filed 2010·Application pending·0 cites
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