Assignee
SHIOMI HIROMU
JP·1 granted patent·3 pending applications·5 citations·filing 2009–2011
Top patents by PatentIndex Score
4 records- 0171US8502310B2III nitride semiconductor electronic device, method for manufacturing III nitride semiconductor electronic device, and III nitride semiconductor epitaxial waferSHIOMI HIROMU·Filed 2009·Granted Aug 6, 2013·5 cites·20 claims
- 0233US2012119225A1Silicon carbide substrate, epitaxial layer provided substrate, semiconductor device, and method for manufacturing silicon carbide substrateSHIOMI HIROMU·Filed 2011·Application pending·0 cites
- 0333US2012211770A1Semiconductor device, combined substrate, and methods for manufacturing themSHIOMI HIROMU·Filed 2011·Application pending·0 cites
- 0430US2012231615A1Semiconductor thin-film manufacturing method, semiconductor thin-film manufacturing apparatus, susceptor, and susceptor holderSHIOMI HIROMU·Filed 2011·Application pending·0 cites
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