Assignee
SHIRAI TAKAYUKI
JP·2 granted patents·2 citations·filing 2013–2013
Technology mixC30B2
Top patents by PatentIndex Score
2 records- 0180US9732436B2SiC single-crystal ingot, SiC single crystal, and production method for sameSHIRAI TAKAYUKI·Filed 2013·Granted Aug 15, 2017·2 cites·6 claims
- 0257US9702057B2Method for producing an n-type SiC single crystal from a Si—C solution comprising a nitrideSHIRAI TAKAYUKI·Filed 2013·Granted Jul 11, 2017·0 cites·4 claims
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