Assignee
SICED ELECT DEV GMBH & CO KG
DE·17 granted patents·585 citations·filing 1999–2006
Top patents by PatentIndex Score
17 records- 0195US7615802B2Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 10, 2009·125 cites·20 claims
- 0293US6936850B2Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum materialSICED ELECT DEV GMBH & CO KG·Filed 2002·Granted Aug 30, 2005·95 cites·7 claims
- 0392US6316791B1Semiconductor structure having a predetermined alpha-silicon carbide region, and use of this semiconductor structureSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Nov 13, 2001·78 cites·18 claims
- 0492US6204135B1Method for patterning semiconductors with high precision, good homogeneity and reproducibilitySICED ELECT DEV GMBH & CO KG·Filed 2000·Granted Mar 20, 2001·76 cites·19 claims
- 0591US6822842B2Switching device for switching at a high operating voltageSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 23, 2004·43 cites·20 claims
- 0684US6468890B2Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor deviceSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Oct 22, 2002·36 cites·24 claims
- 0779US7646026B2SiC-PN power diodeSICED ELECT DEV GMBH & CO KG·Filed 2006·Granted Jan 12, 2010·8 cites·20 claims
- 0879US6740167B1Device for mounting a substrate and method for producing an insert for a susceptorSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted May 25, 2004·27 cites·13 claims
- 0973US6693322B2Semiconductor construction with buried island region and contact regionSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Feb 17, 2004·19 cites·18 claims
- 1072US6365494B2Method for producing an ohmic contactSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Apr 2, 2002·19 cites·5 claims
- 1167US6693314B2Junction field-effect transistor with more highly doped connecting regionSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Feb 17, 2004·13 cites·15 claims
- 1256US6232625B1Semiconductor configuration and use thereofSICED ELECT DEV GMBH & CO KG·Filed 1999·Granted May 15, 2001·16 cites·22 claims
- 1354US6653666B2J-FET semiconductor configurationSICED ELECT DEV GMBH & CO KG·Filed 2001·Granted Nov 25, 2003·7 cites·15 claims
- 1454US6188555B1Device for limiting alternating electric currents, in particular in the event of a short circuitSICED ELECT DEV GMBH & CO KG·Filed 1999·Granted Feb 13, 2001·15 cites·51 claims
- 1548US7071503B2Semiconductor structure with a switch element and an edge elementSICED ELECT DEV GMBH & CO KG·Filed 2004·Granted Jul 4, 2006·4 cites·19 claims
- 1645US6815351B2Method for contacting a semiconductor configurationSICED ELECT DEV GMBH & CO KG·Filed 2003·Granted Nov 9, 2004·2 cites·12 claims
- 1743US6225680B1Semiconductor structure based on silicon carbide material, with a plurality electrically different partial regionsSICED ELECT DEV GMBH & CO KG·Filed 2000·Granted May 1, 2001·2 cites·12 claims
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