Assignee
SICRYSTAL AG
DE·3 granted patents·3 pending applications·4 citations·filing 2009–2015
Top patents by PatentIndex Score
6 records- 0182US9590046B2Monocrystalline SiC substrate with a non-homogeneous lattice plane courseSICRYSTAL AG·Filed 2014·Granted Mar 7, 2017·2 cites·7 claims
- 0276US9732438B2Method for producing a vanadium-doped silicon carbide volume monocrystal, and vanadium-doped silicon carbide substrateSICRYSTAL AG·Filed 2015·Granted Aug 15, 2017·2 cites·13 claims
- 0354US9376764B2Physical vapor transport growth system for simultaneously growing more than one SiC single crystal and method of growingSICRYSTAL AG·Filed 2013·Granted Jun 28, 2016·0 cites·17 claims
- 0448US2010159182A1Production Method for a Codoped Bulk SiC Crystal and High-Impedance SiC SubstrateSICRYSTAL AG·Filed 2009·Application pending·0 cites
- 0540US2011086213A1Method of producing a silicon carbide bulk single crystal with thermal treatment, and low-impedance monocrystalline silicon carbide substrateSICRYSTAL AG·Filed 2010·Application pending·0 cites
- 0638US2010175614A1Thermally insulated configuration and method for producing a bulk sic crystalSICRYSTAL AG·Filed 2010·Application pending·0 cites
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