Assignee
SILICON SEMICONDUCTOR CORP
US·10 granted patents·712 citations·filing 2001–2004
Top patents by PatentIndex Score
10 records- 0198US6649975B2Vertical power devices having trench-based electrodes thereinSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Nov 18, 2003·145 cites·8 claims
- 0297US6764889B2Methods of forming vertical mosfets having trench-based gate electrodes within deeper trench-based source electrodesSILICON SEMICONDUCTOR CORP·Filed 2003·Granted Jul 20, 2004·126 cites·9 claims
- 0396US6621121B2Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodesSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Sep 16, 2003·113 cites·11 claims
- 0495US6653691B2Radio frequency (RF) power devices having faraday shield layers thereinSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Nov 25, 2003·65 cites·58 claims
- 0594US6800897B2Integrated circuit power devices having junction barrier controlled schottky diodes thereinSILICON SEMICONDUCTOR CORP·Filed 2003·Granted Oct 5, 2004·71 cites·13 claims
- 0694US6781194B2Vertical power devices having retrograded-doped transition regions and insulated trench-based electrodes thereinSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Aug 24, 2004·76 cites·23 claims
- 0790US6586833B2Packaged power devices having vertical power mosfets therein that are flip-chip mounted to slotted gate electrode strip linesSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Jul 1, 2003·41 cites·11 claims
- 0889US6791143B2Power semiconductor devices having laterally extending base shielding regions that inhibit base reach-throughSILICON SEMICONDUCTOR CORP·Filed 2001·Granted Sep 14, 2004·37 cites·8 claims
- 0981US7041559B2Methods of forming power semiconductor devices having laterally extending base shielding regionsSILICON SEMICONDUCTOR CORP·Filed 2004·Granted May 9, 2006·24 cites·2 claims
- 1072US6784486B2Vertical power devices having retrograded-doped transition regions thereinSILICON SEMICONDUCTOR CORP·Filed 2002·Granted Aug 31, 2004·14 cites·11 claims
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →