Assignee
SILICON WAFER TECHNOLOGIES INC
US·8 granted patents·1,003 citations·filing 2000–2003
Top patents by PatentIndex Score
8 records- 0197US6352909B1Process for lift-off of a layer from a substrateSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Mar 5, 2002·187 cites·18 claims
- 0296US6806171B1Method of producing a thin layer of crystalline materialSILICON WAFER TECHNOLOGIES INC·Filed 2002·Granted Oct 19, 2004·310 cites·6 claims
- 0396US6368938B1Process for manufacturing a silicon-on-insulator substrate and semiconductor devices on said substrateSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Apr 9, 2002·156 cites·6 claims
- 0495US6387829B1Separation process for silicon-on-insulator wafer fabricationSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted May 14, 2002·115 cites·13 claims
- 0594US6346459B1Process for lift off and transfer of semiconductor devices onto an alien substrateSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Feb 12, 2002·99 cites·20 claims
- 0691US6355493B1Method for forming IC's comprising a highly-resistive or semi-insulating semiconductor substrate having a thin, low resistance active semiconductor layer thereonSILICON WAFER TECHNOLOGIES INC·Filed 2000·Granted Mar 12, 2002·59 cites·11 claims
- 0788US6696352B1Method of manufacture of a multi-layered substrate with a thin single crystalline layer and a versatile sacrificial layerSILICON WAFER TECHNOLOGIES INC·Filed 2002·Granted Feb 24, 2004·61 cites·8 claims
- 0869US6861320B1Method of making starting material for chip fabrication comprising a buried silicon nitride layerSILICON WAFER TECHNOLOGIES INC·Filed 2003·Granted Mar 1, 2005·16 cites·3 claims
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