Assignee
SILICONIX INC
US·249 granted patents·4 pending applications·19,782 citations·filing 1975–2009
Top patents by PatentIndex Score
253 records- 0199US6239463B1Low resistance power MOSFET or other device containing silicon-germanium layerSILICONIX INC·Filed 1997·Granted May 29, 2001·305 cites·60 claims
- 0299US6049108ATrench-gated MOSFET with bidirectional voltage clampingSILICONIX INC·Filed 1997·Granted Apr 11, 2000·511 cites·14 claims
- 0399US5156989AComplementary, isolated DMOS IC technologySILICONIX INC·Filed 1988·Granted Oct 20, 1992·405 cites·20 claims
- 0499US4914058AGrooved DMOS process with varying gate dielectric thicknessSILICONIX INC·Filed 1987·Granted Apr 3, 1990·352 cites·9 claims
- 0598US5689128AHigh density trenched DMOS transistorSILICONIX INC·Filed 1995·Granted Nov 18, 1997·242 cites·7 claims
- 0698US5597765AMethod for making termination structure for power MOSFETSILICONIX INC·Filed 1995·Granted Jan 28, 1997·233 cites·11 claims
- 0798US5386136ALightly-doped drain MOSFET with improved breakdown characteristicsSILICONIX INC·Filed 1991·Granted Jan 31, 1995·238 cites·18 claims
- 0898US5168331APower metal-oxide-semiconductor field effect transistorSILICONIX INC·Filed 1991·Granted Dec 1, 1992·236 cites·39 claims
- 0998US5072266ATrench DMOS power transistor with field-shaping body profile and three-dimensional geometrySILICONIX INC·Filed 1988·Granted Dec 10, 1991·441 cites·14 claims
- 1098US4893160AMethod for increasing the performance of trenched devices and the resulting structureSILICONIX INC·Filed 1987·Granted Jan 9, 1990·423 cites·8 claims
- 1198US4811065APower DMOS transistor with high speed body diodeSILICONIX INC·Filed 1987·Granted Mar 7, 1989·169 cites·6 claims
- 1298US4767722AMethod for making planar vertical channel DMOS structuresSILICONIX INC·Filed 1986·Granted Aug 30, 1988·210 cites·11 claims
- 1397US7795675B2Termination for trench MIS deviceSILICONIX INC·Filed 2005·Granted Sep 14, 2010·99 cites·10 claims
- 1497US7183610B2Super trench MOSFET including buried source electrode and method of fabricating the sameSILICONIX INC·Filed 2004·Granted Feb 27, 2007·118 cites·22 claims
- 1597US6084264ATrench MOSFET having improved breakdown and on-resistance characteristicsSILICONIX INC·Filed 1998·Granted Jul 4, 2000·209 cites·14 claims
- 1697US5973367AMultiple gated MOSFET for use in DC-DC converterSILICONIX INC·Filed 1997·Granted Oct 26, 1999·189 cites·19 claims
- 1797US5929481AHigh density trench DMOS transistor with trench bottom implantSILICONIX INC·Filed 1997·Granted Jul 27, 1999·254 cites·6 claims
- 1897US5814858AVertical power MOSFET having reduced sensitivity to variations in thickness of epitaxial layerSILICONIX INC·Filed 1996·Granted Sep 29, 1998·236 cites·25 claims
- 1997US5665996AVertical power mosfet having thick metal layer to reduce distributed resistanceSILICONIX INC·Filed 1994·Granted Sep 9, 1997·301 cites·26 claims
- 2097US5605852AMethod for fabricating high voltage transistor having trenched terminationSILICONIX INC·Filed 1995·Granted Feb 25, 1997·199 cites·9 claims
- 2197US5592005APunch-through field effect transistorSILICONIX INC·Filed 1995·Granted Jan 7, 1997·171 cites·20 claims
- 2297US5514608AMethod of making lightly-doped drain DMOS with improved breakdown characteristicsSILICONIX INC·Filed 1994·Granted May 7, 1996·150 cites·18 claims
- 2397US5485027AIsolated DMOS IC technologySILICONIX INC·Filed 1992·Granted Jan 16, 1996·222 cites·3 claims
- 2497US5430324AHigh voltage transistor having edge termination utilizing trench technologySILICONIX INC·Filed 1992·Granted Jul 4, 1995·184 cites·11 claims
- 2597US5426328ABICDMOS structuresSILICONIX INC·Filed 1994·Granted Jun 20, 1995·143 cites·14 claims
- 2697US5374569AMethod for forming a BiCDMOSSILICONIX INC·Filed 1993·Granted Dec 20, 1994·119 cites·15 claims
- 2797US5034785APlanar vertical channel DMOS structureSILICONIX INC·Filed 1988·Granted Jul 23, 1991·155 cites·18 claims
- 2896US6838722B2Structures of and methods of fabricating trench-gated MIS devicesSILICONIX INC·Filed 2002·Granted Jan 4, 2005·98 cites·7 claims
- 2996US6392290B1Vertical structure for semiconductor wafer-level chip scale packagesSILICONIX INC·Filed 2000·Granted May 21, 2002·171 cites·23 claims
- 3096US6285060B1Barrier accumulation-mode MOSFETSILICONIX INC·Filed 1999·Granted Sep 4, 2001·173 cites·19 claims
- 3196US6069043AMethod of making punch-through field effect transistorSILICONIX INC·Filed 1997·Granted May 30, 2000·127 cites·14 claims
- 3296US6046470ATrench-gated MOSFET with integral temperature detection diodeSILICONIX INC·Filed 1997·Granted Apr 4, 2000·219 cites·31 claims
- 3396US5895952ATrench MOSFET with multi-resistivity drain to provide low on-resistanceSILICONIX INC·Filed 1996·Granted Apr 20, 1999·162 cites·36 claims
- 3496US5818084APseudo-Schottky diodeSILICONIX INC·Filed 1996·Granted Oct 6, 1998·167 cites·14 claims
- 3596US5757081ASurface mount and flip chip technology for total integrated circuit isolationSILICONIX INC·Filed 1996·Granted May 26, 1998·224 cites·8 claims
- 3696US5689144AFour-terminal power MOSFET switch having reduced threshold voltage and on-resistanceSILICONIX INC·Filed 1996·Granted Nov 18, 1997·178 cites·28 claims
- 3796US5639676ATrenched DMOS transistor fabrication having thick termination region oxideSILICONIX INC·Filed 1996·Granted Jun 17, 1997·138 cites·6 claims
- 3896US5545909AElectrostatic discharge protection device for integrated circuitSILICONIX INC·Filed 1994·Granted Aug 13, 1996·107 cites·33 claims
- 3996US5164325AMethod of making a vertical current flow field effect transistorSILICONIX INC·Filed 1987·Granted Nov 17, 1992·144 cites·27 claims
- 4095US6476442B1Pseudo-Schottky diodeSILICONIX INC·Filed 1998·Granted Nov 5, 2002·153 cites·11 claims
- 4195US6078090ATrench-gated Schottky diode with integral clamping diodeSILICONIX INC·Filed 1997·Granted Jun 20, 2000·265 cites·66 claims
- 4295US5981344ATrench field effect transistor with reduced punch-through susceptibility and low RDSonSILICONIX INC·Filed 1996·Granted Nov 9, 1999·117 cites·6 claims
- 4395US5929690AThree-terminal power MOSFET switch for use as synchronous rectifier or voltage clampSILICONIX INC·Filed 1997·Granted Jul 27, 1999·126 cites·8 claims
- 4495US5917216ATrenched field effect transistor with PN depletion barrierSILICONIX INC·Filed 1996·Granted Jun 29, 1999·164 cites·14 claims
- 4595US5753529ASurface mount and flip chip technology for total integrated circuit isolationSILICONIX INC·Filed 1995·Granted May 19, 1998·183 cites·7 claims
- 4695US5744994AThree-terminal power mosfet switch for use as synchronous rectifier or voltage clampSILICONIX INC·Filed 1996·Granted Apr 28, 1998·133 cites·8 claims
- 4795US5616945AMultiple gated MOSFET for use in DC-DC converterSILICONIX INC·Filed 1995·Granted Apr 1, 1997·136 cites·1 claims
- 4895US5614751AEdge termination structure for power MOSFETSILICONIX INC·Filed 1996·Granted Mar 25, 1997·134 cites·16 claims
- 4995US5578851ATrenched DMOS transistor having thick field oxide in termination regionSILICONIX INC·Filed 1996·Granted Nov 26, 1996·136 cites·5 claims
- 5095US5474943AMethod for fabricating a short channel trenched DMOS transistorSILICONIX INC·Filed 1994·Granted Dec 12, 1995·116 cites·6 claims
Showing the top 50 of 253 patent records by PatentIndex Score.
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