Assignee
SIXPOINT MAT INC
US·32 granted patents·6 pending applications·56 citations·filing 2013–2024
Top patents by PatentIndex Score
38 records- 0197US9790617B2Group III nitride bulk crystals and their fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Oct 17, 2017·6 cites·20 claims
- 0295US9441311B2Growth reactor for gallium-nitride crystals using ammonia and hydrogen chlorideSIXPOINT MAT INC·Filed 2014·Granted Sep 13, 2016·7 cites·14 claims
- 0392US9909230B2Seed selection and growth methods for reduced-crack group III nitride bulk crystalsSIXPOINT MAT INC·Filed 2016·Granted Mar 6, 2018·4 cites·25 claims
- 0492US9670594B2Group III nitride crystals, their fabrication method, and method of fabricating bulk group III nitride crystals in supercritical ammoniaSIXPOINT MAT INC·Filed 2015·Granted Jun 6, 2017·2 cites·19 claims
- 0591US10287709B2Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication methodSIXPOINT MAT INC·Filed 2017·Granted May 14, 2019·3 cites·13 claims
- 0691US9822465B2Method of fabricating group III nitride with gradually degraded crystal structureSIXPOINT MAT INC·Filed 2015·Granted Nov 21, 2017·3 cites·21 claims
- 0788US9518340B2Method of growing group III nitride crystalsSIXPOINT MAT INC·Filed 2013·Granted Dec 13, 2016·9 cites·21 claims
- 0884US9783910B2High pressure reactor and method of growing group III nitride crystals in supercritical ammoniaSIXPOINT MAT INC·Filed 2016·Granted Oct 10, 2017·1 cites·5 claims
- 0984US9543393B2Group III nitride wafer and its production methodSIXPOINT MAT INC·Filed 2013·Granted Jan 10, 2017·5 cites·22 claims
- 1081US10024809B2Group III nitride wafers and fabrication method and testing methodSIXPOINT MAT INC·Filed 2015·Granted Jul 17, 2018·2 cites·18 claims
- 1180US10242868B1Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Mar 26, 2019·3 cites·15 claims
- 1278US10141435B2Electronic device using group III nitride semiconductor and its fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Nov 27, 2018·1 cites·16 claims
- 1378US10134884B2Electronic device using group III nitride semiconductor and its fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Nov 20, 2018·1 cites·21 claims
- 1478US10134883B2Electronic device using group III nitride semiconductor and its fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Nov 20, 2018·1 cites·22 claims
- 1577US9834863B2Group III nitride bulk crystals and fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Dec 5, 2017·1 cites·28 claims
- 1677US9466481B2Electronic device and epitaxial multilayer wafer of group III nitride semiconductor having specified dislocation density, oxygen/electron concentration, and active layer thicknessSIXPOINT MAT INC·Filed 2014·Granted Oct 11, 2016·2 cites·20 claims
- 1772US10156530B2Group III nitride wafers and fabrication method and testing methodSIXPOINT MAT INC·Filed 2015·Granted Dec 18, 2018·1 cites·19 claims
- 1871US9685327B2Electronic device using group III nitride semiconductor and its fabrication method and an epitaxial multi-layer wafer for making itSIXPOINT MAT INC·Filed 2014·Granted Jun 20, 2017·1 cites·18 claims
- 1970US10087548B2High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystalSIXPOINT MAT INC·Filed 2015·Granted Oct 2, 2018·0 cites·20 claims
- 2070US9673044B2Group III nitride substrates and their fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Jun 6, 2017·1 cites·21 claims
- 2170US9431488B2Composite substrate of gallium nitride and metal oxideSIXPOINT MAT INC·Filed 2015·Granted Aug 30, 2016·1 cites·23 claims
- 2269US9435051B2Bismuth-doped semi-insulating group III nitride wafer and its production methodSIXPOINT MAT INC·Filed 2015·Granted Sep 6, 2016·1 cites·17 claims
- 2368US9790616B2Method of fabricating bulk group III nitride crystals in supercritical ammoniaSIXPOINT MAT INC·Filed 2015·Granted Oct 17, 2017·0 cites·11 claims
- 2467US11767609B2Low-dislocation bulk GaN crystal and method of fabricating sameSIXPOINT MAT INC·Filed 2021·Granted Sep 26, 2023·0 cites·15 claims
- 2565US2017175295A1Method for producing group iii nitride wafers and group iii nitride wafersSIXPOINT MAT INC·Filed 2017·Application pending·0 cites
- 2664US2025160044A1Group iii nitride vertical photoconductive semiconductor switchSIXPOINT MAT INC·Filed 2024·Application pending·0 cites
- 2763US10161059B2Group III nitride bulk crystals and their fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Dec 25, 2018·0 cites·11 claims
- 2861US10355115B2Electronic device using group III nitride semiconductor and its fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Jul 16, 2019·0 cites·10 claims
- 2960US9885121B2High pressure reactor and method of growing group III nitride crystals in supercritical ammoniaSIXPOINT MAT INC·Filed 2016·Granted Feb 6, 2018·0 cites·18 claims
- 3059US9985102B2Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growthSIXPOINT MAT INC·Filed 2014·Granted May 29, 2018·0 cites·15 claims
- 3159US2024021724A1GaN TRENCH MOSFET AND FABRICATION METHODSIXPOINT MAT INC·Filed 2023·Application pending·0 cites
- 3257US11742800B2Terahertz Gunn oscillator using gallium nitrideSIXPOINT MAT INC·Filed 2022·Granted Aug 29, 2023·0 cites·19 claims
- 3357US2017198407A1Methods for producing improved crystallinity group iii-nitride crystals from initial group iii-nitride seed by ammonothermal growthSIXPOINT MAT INC·Filed 2017·Application pending·0 cites
- 3454US9754782B2Group III nitride substrates and their fabrication methodSIXPOINT MAT INC·Filed 2015·Granted Sep 5, 2017·0 cites·13 claims
- 3553US2019249333A1Low-dislocation bulk gan crystal and method of fabricating sameSIXPOINT MAT INC·Filed 2019·Application pending·0 cites
- 3652US10316431B2Method of growing group III nitride crystalsSIXPOINT MAT INC·Filed 2015·Granted Jun 11, 2019·0 cites·17 claims
- 3746US10354863B2Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication methodSIXPOINT MAT INC·Filed 2017·Granted Jul 16, 2019·0 cites·10 claims
- 3845US2019091807A1Seed crystal for growth of gallium nitride bulk crystal in supercritical ammonia and fabrication methodSIXPOINT MAT INC·Filed 2017·Application pending·0 cites
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