Assignee
SPIN MEMORY INC
US·119 granted patents·7 pending applications·409 citations·filing 2016–2019
Top patents by PatentIndex Score
126 records- 0198US10236439B1Switching and stability control for perpendicular magnetic tunnel junction deviceSPIN MEMORY INC·Filed 2017·Granted Mar 19, 2019·15 cites·11 claims
- 0297US10339993B1Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switchingSPIN MEMORY INC·Filed 2017·Granted Jul 2, 2019·10 cites·20 claims
- 0397US10236047B1Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Mar 19, 2019·32 cites·34 claims
- 0496US10468588B2Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layerSPIN MEMORY INC·Filed 2018·Granted Nov 5, 2019·8 cites·20 claims
- 0596US10270027B1Self-generating AC current assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Apr 23, 2019·25 cites·46 claims
- 0696US10236048B1AC current write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Mar 19, 2019·23 cites·31 claims
- 0795US10580827B1Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switchingSPIN MEMORY INC·Filed 2018·Granted Mar 3, 2020·8 cites·37 claims
- 0895US10468590B2High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memorySPIN MEMORY INC·Filed 2016·Granted Nov 5, 2019·7 cites·15 claims
- 0995US10333063B1Fabrication of a perpendicular magnetic tunnel junction (PMTJ) using block copolymersSPIN MEMORY INC·Filed 2018·Granted Jun 25, 2019·6 cites·20 claims
- 1095US10229724B1Microwave write-assist in series-interconnected orthogonal STT-MRAM devicesSPIN MEMORY INC·Filed 2017·Granted Mar 12, 2019·20 cites·41 claims
- 1194US11107978B2Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layerSPIN MEMORY INC·Filed 2018·Granted Aug 31, 2021·6 cites·19 claims
- 1293US10600465B1Spin-orbit torque (SOT) magnetic memory with voltage or current assisted switchingSPIN MEMORY INC·Filed 2018·Granted Mar 24, 2020·14 cites·8 claims
- 1393US10355045B1Three dimensional perpendicular magnetic junction with thin-film transistorSPIN MEMORY INC·Filed 2017·Granted Jul 16, 2019·9 cites·21 claims
- 1493US10326073B1Spin hall effect (SHE) assisted three-dimensional spin transfer torque magnetic random access memory (STT-MRAM)SPIN MEMORY INC·Filed 2017·Granted Jun 18, 2019·13 cites·17 claims
- 1592US10679685B2Shared bit line array architecture for magnetoresistive memorySPIN MEMORY INC·Filed 2017·Granted Jun 9, 2020·8 cites·20 claims
- 1692US10347308B1Systems and methods utilizing parallel configurations of magnetic memory devicesSPIN MEMORY INC·Filed 2017·Granted Jul 9, 2019·11 cites·17 claims
- 1791US10643680B2Memory cell having magnetic tunnel junction and thermal stability enhancement layerSPIN MEMORY INC·Filed 2018·Granted May 5, 2020·3 cites·13 claims
- 1891US10360961B1AC current pre-charge write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Jul 23, 2019·12 cites·21 claims
- 1991US10319900B1Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment densitySPIN MEMORY INC·Filed 2017·Granted Jun 11, 2019·4 cites·21 claims
- 2091US10255962B1Microwave write-assist in orthogonal STT-MRAMSPIN MEMORY INC·Filed 2017·Granted Apr 9, 2019·12 cites·45 claims
- 2190US10937479B1Integration of epitaxially grown channel selector with MRAM deviceSPIN MEMORY INC·Filed 2019·Granted Mar 2, 2021·5 cites·12 claims
- 2290US10699761B2Word line decoder memory architectureSPIN MEMORY INC·Filed 2018·Granted Jun 30, 2020·9 cites·9 claims
- 2390US10658021B1Scalable spin-orbit torque (SOT) magnetic memorySPIN MEMORY INC·Filed 2018·Granted May 19, 2020·9 cites·21 claims
- 2489US10403343B2Systems and methods utilizing serial configurations of magnetic memory devicesSPIN MEMORY INC·Filed 2017·Granted Sep 3, 2019·9 cites·21 claims
- 2588US10957370B1Integration of epitaxially grown channel selector with two terminal resistive switching memory elementSPIN MEMORY INC·Filed 2019·Granted Mar 23, 2021·4 cites·11 claims
- 2688US10784437B2Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layerSPIN MEMORY INC·Filed 2018·Granted Sep 22, 2020·5 cites·18 claims
- 2788US10693056B2Three-dimensional (3D) magnetic memory device comprising a magnetic tunnel junction (MTJ) having a metallic buffer layerSPIN MEMORY INC·Filed 2018·Granted Jun 23, 2020·2 cites·18 claims
- 2888US10658425B2Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channelsSPIN MEMORY INC·Filed 2018·Granted May 19, 2020·5 cites·12 claims
- 2987US11107974B2Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layerSPIN MEMORY INC·Filed 2018·Granted Aug 31, 2021·4 cites·27 claims
- 3087US10468293B2Methods of forming perpendicular magnetic tunnel junction memory cells having vertical channelsSPIN MEMORY INC·Filed 2017·Granted Nov 5, 2019·5 cites·20 claims
- 3186US10886330B2Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitchSPIN MEMORY INC·Filed 2017·Granted Jan 5, 2021·6 cites·21 claims
- 3286US10803916B2Methods and systems for writing to magnetic memory devices utilizing alternating currentSPIN MEMORY INC·Filed 2017·Granted Oct 13, 2020·3 cites·14 claims
- 3386US10797233B2Methods of fabricating three-dimensional magnetic memory devicesSPIN MEMORY INC·Filed 2017·Granted Oct 6, 2020·3 cites·22 claims
- 3486US10651370B2Perpendicular magnetic tunnel junction retention and endurance improvementSPIN MEMORY INC·Filed 2017·Granted May 12, 2020·2 cites·14 claims
- 3586US10600478B2Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientationsSPIN MEMORY INC·Filed 2018·Granted Mar 24, 2020·7 cites·30 claims
- 3685US10937478B2Systems and methods utilizing serial and parallel configurations of magnetic memory devicesSPIN MEMORY INC·Filed 2019·Granted Mar 2, 2021·2 cites·21 claims
- 3785US10529915B2Bit line structures for three-dimensional arrays with magnetic tunnel junction devices including an annular free magnetic layer and a planar reference magnetic layerSPIN MEMORY INC·Filed 2018·Granted Jan 7, 2020·5 cites·35 claims
- 3884US10916696B2Method for manufacturing magnetic memory element with post pillar formation annealingSPIN MEMORY INC·Filed 2019·Granted Feb 9, 2021·6 cites·18 claims
- 3984US10665777B2Precessional spin current structure with non-magnetic insertion layer for MRAMSPIN MEMORY INC·Filed 2017·Granted May 26, 2020·5 cites·12 claims
- 4082US10672976B2Precessional spin current structure with high in-plane magnetization for MRAMSPIN MEMORY INC·Filed 2017·Granted Jun 2, 2020·3 cites·20 claims
- 4181US10840439B2Magnetic tunnel junction (MTJ) fabrication methods and systemsSPIN MEMORY INC·Filed 2017·Granted Nov 17, 2020·3 cites·23 claims
- 4281US10777736B2Polishing stop layer(s) for processing arrays of semiconductor elementsSPIN MEMORY INC·Filed 2017·Granted Sep 15, 2020·2 cites·8 claims
- 4380US10629649B2Method of making a three dimensional perpendicular magnetic tunnel junction with thin-film transistorSPIN MEMORY INC·Filed 2017·Granted Apr 21, 2020·3 cites·24 claims
- 4479US10971680B2Multi terminal device stack formation methodsSPIN MEMORY INC·Filed 2018·Granted Apr 6, 2021·1 cites·20 claims
- 4579US10930843B2Process for manufacturing scalable spin-orbit torque (SOT) magnetic memorySPIN MEMORY INC·Filed 2018·Granted Feb 23, 2021·4 cites·13 claims
- 4679US10615335B2Spin transfer torque structure for MRAM devices having a spin current injection capping layerSPIN MEMORY INC·Filed 2018·Granted Apr 7, 2020·3 cites·23 claims
- 4779US10559338B2Multi-bit cell read-out techniquesSPIN MEMORY INC·Filed 2018·Granted Feb 11, 2020·4 cites·18 claims
- 4878US10686009B2High density MRAM integrationSPIN MEMORY INC·Filed 2018·Granted Jun 16, 2020·1 cites·16 claims
- 4977US10438999B2Annular vertical Si etched channel MOS devicesSPIN MEMORY INC·Filed 2017·Granted Oct 8, 2019·2 cites·8 claims
- 5076US10692556B2Defect injection structure and mechanism for magnetic memorySPIN MEMORY INC·Filed 2018·Granted Jun 23, 2020·1 cites·20 claims
Showing the top 50 of 126 patent records by PatentIndex Score.
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