Assignee
STORCK PETER
DE·3 granted patents·6 citations·filing 2009–2012
Top patents by PatentIndex Score
3 records- 0175US8093143B2Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front sideSTORCK PETER·Filed 2010·Granted Jan 10, 2012·4 cites·6 claims
- 0256US8115195B2Semiconductor wafer with a heteroepitaxial layer and a method for producing the waferSTORCK PETER·Filed 2009·Granted Feb 14, 2012·1 cites·2 claims
- 0352US10192739B2Layered semiconductor substrate with reduced bow having a group III nitride layer and method for manufacturing itSTORCK PETER·Filed 2012·Granted Jan 29, 2019·1 cites·13 claims
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