Assignee
SUMITOMO MITSUBISHI SILICON
JP·88 granted patents·5 pending applications·2,545 citations·filing 1998–2010
Top patents by PatentIndex Score
93 records- 0199USRE38937ESusceptor for vapor-phase growth apparatusSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Jan 24, 2006·322 cites·6 claims
- 0298US7329947B2Heat treatment jig for semiconductor substrateSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Feb 12, 2008·560 cites·8 claims
- 0398US7210925B2Heat treatment jig for silicon semiconductor substrateSUMITOMO MITSUBISHI SILICON·Filed 2005·Granted May 1, 2007·480 cites·17 claims
- 0498US7163393B2Heat treatment jig for semiconductor silicon substrateSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Jan 16, 2007·482 cites·8 claims
- 0591US6779159B2Defect inspection method and defect inspection apparatusSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Aug 17, 2004·54 cites·14 claims
- 0686US6695035B2Electromagnetic induction casting apparatusSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Feb 24, 2004·20 cites·8 claims
- 0785US6641888B2Silicon single crystal, silicon wafer, and epitaxial wafer.SUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Nov 4, 2003·29 cites·12 claims
- 0884US7947572B2Method of manufacturing a SOI structure having a SiGe layer interposed between the silicon and the insulatorSUMITOMO MITSUBISHI SILICON·Filed 2010·Granted May 24, 2011·7 cites·9 claims
- 0984US7686973B2Silicon wafer etching method and apparatus, and impurity analysis methodSUMITOMO MITSUBISHI SILICON·Filed 2007·Granted Mar 30, 2010·8 cites·10 claims
- 1084US7193724B2Method for measuring thickness of thin film-like material during surface polishing, and surface polishing method and surface polishing apparatusSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Mar 20, 2007·39 cites·7 claims
- 1184US6569237B2Method of pulling up silicon single crystal and method of manufacturing epitaxial waferSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted May 27, 2003·22 cites·12 claims
- 1283US6878451B2Silicon single crystal, silicon wafer, and epitaxial waferSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Apr 12, 2005·15 cites·3 claims
- 1382US6569535B2Silicon wafer and epitaxial silicon wafer utilizing sameSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted May 27, 2003·20 cites·18 claims
- 1481US7029380B2Double-side polishing method and apparatusSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Apr 18, 2006·33 cites·10 claims
- 1580US7470169B2Method of polishing semiconductor wafers by using double-sided polisherSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Dec 30, 2008·26 cites·5 claims
- 1680US7456106B2Method for producing a silicon waferSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Nov 25, 2008·23 cites·5 claims
- 1779US7648409B1Double side polishing method and apparatusSUMITOMO MITSUBISHI SILICON·Filed 2000·Granted Jan 19, 2010·24 cites·13 claims
- 1879US7397110B2High resistance silicon wafer and its manufacturing methodSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Jul 8, 2008·24 cites·15 claims
- 1978US6802928B2Method for cutting hard and brittle materialSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Oct 12, 2004·19 cites·6 claims
- 2077US7837791B2Silicon single crystal wafer for particle monitorSUMITOMO MITSUBISHI SILICON·Filed 2008·Granted Nov 23, 2010·2 cites·7 claims
- 2176US7253082B2Pasted SOI substrate, process for producing the same and semiconductor deviceSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Aug 7, 2007·25 cites·10 claims
- 2275US7244306B2Method for measuring point defect distribution of silicon single crystal ingotSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Jul 17, 2007·12 cites·14 claims
- 2374USRE39173ESilicon single crystal waferSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Jul 11, 2006·10 cites·23 claims
- 2474US6702892B2Production device for high-quality silicon single crystalsSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Mar 9, 2004·19 cites·4 claims
- 2571US6709957B2Method of producing epitaxial wafersSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Mar 23, 2004·9 cites·10 claims
- 2670US7273647B2Silicon annealed wafer and silicon epitaxial waferSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Sep 25, 2007·13 cites·7 claims
- 2770US7214267B2Silicon single crystal and method for growing silicon single crystalSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted May 8, 2007·7 cites·9 claims
- 2869US7589023B2Method of manufacturing semiconductor waferSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Sep 15, 2009·13 cites·9 claims
- 2969US6994835B2Silicon continuous casting methodSUMITOMO MITSUBISHI SILICON·Filed 2000·Granted Feb 7, 2006·14 cites·20 claims
- 3069US6835245B2Method of manufacturing epitaxial wafer and method of producing single crystal as material thereforSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Dec 28, 2004·8 cites·5 claims
- 3169US6830985B2Method and apparatus for producing bonded dielectric separation waferSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Dec 14, 2004·18 cites·7 claims
- 3268US7442038B2Heat treatment jig for semiconductor silicon substrateSUMITOMO MITSUBISHI SILICON·Filed 2006·Granted Oct 28, 2008·2 cites·1 claims
- 3368US7172656B2Device and method for measuring position of liquid surface or melt in single-crystal-growing apparatusSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Feb 6, 2007·13 cites·12 claims
- 3468US6905771B2Silicon waferSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Jun 14, 2005·12 cites·14 claims
- 3567US7741193B2SOI structure having a SiGe layer interposed between the silicon and the insulatorSUMITOMO MITSUBISHI SILICON·Filed 2005·Granted Jun 22, 2010·3 cites·7 claims
- 3667US7253069B2Method for manufacturing silicon-on-insulator waferSUMITOMO MITSUBISHI SILICON·Filed 2005·Granted Aug 7, 2007·2 cites·12 claims
- 3767US7195669B2Method of producing silicon monocrystalSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Mar 27, 2007·7 cites·9 claims
- 3867US7074271B2Method of identifying defect distribution in silicon single crystal ingotSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Jul 11, 2006·7 cites·13 claims
- 3967US6767400B2Crystal growth methodSUMITOMO MITSUBISHI SILICON·Filed 2001·Granted Jul 27, 2004·7 cites·5 claims
- 4067US6726319B1Method for inspecting surface of semiconductor waferSUMITOMO MITSUBISHI SILICON·Filed 2000·Granted Apr 27, 2004·13 cites·25 claims
- 4163US7563319B2Manufacturing method of silicon waferSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Jul 21, 2009·9 cites·12 claims
- 4263US7288791B2Epitaxial wafer and method for manufacturing methodSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Oct 30, 2007·8 cites·7 claims
- 4363US7014704B2Method for growing silicon single crystalSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Mar 21, 2006·5 cites·3 claims
- 4462US7258739B2Process for producing epitaxial silicon wafer and silicon wafer produced by process thereofSUMITOMO MITSUBISHI SILICON·Filed 2005·Granted Aug 21, 2007·1 cites·7 claims
- 4561US7264674B2Method for pulling a single crystalSUMITOMO MITSUBISHI SILICON·Filed 2004·Granted Sep 4, 2007·8 cites·5 claims
- 4661US6755910B2Method for pulling single crystalSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Jun 29, 2004·4 cites·10 claims
- 4760US6908509B2CZ raw material supply methodSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Jun 21, 2005·4 cites·7 claims
- 4860US6805746B2Method for supplying CZ materialSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Oct 19, 2004·10 cites·4 claims
- 4957US7002674B2Method and apparatus for inspecting defectsSUMITOMO MITSUBISHI SILICON·Filed 2003·Granted Feb 21, 2006·2 cites·4 claims
- 5057US6599760B2Epitaxial semiconductor wafer manufacturing methodSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Jul 29, 2003·5 cites·5 claims
Showing the top 50 of 93 patent records by PatentIndex Score.
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