Assignee
SUNEDISON SEMICONDUCTOR LTD UEN201334164H
SG·64 granted patents·5 pending applications·167 citations·filing 2012–2019
Top patents by PatentIndex Score
69 records- 0193US9831115B2Process flow for manufacturing semiconductor on insulator structures in parallelSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2017·Granted Nov 28, 2017·10 cites·23 claims
- 0292US10283402B2Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stressSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted May 7, 2019·6 cites·60 claims
- 0392US9583364B2Processes and apparatus for preparing heterostructures with reduced strain by radial compressionSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2013·Granted Feb 28, 2017·8 cites·15 claims
- 0491US10487418B2Seed chuck assemblies and crystal pulling systems for reducing deposit build-up during crystal growth processSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Nov 26, 2019·3 cites·19 claims
- 0591US9355842B2Direct and sequential formation of monolayers of boron nitride and graphene on substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted May 31, 2016·9 cites·23 claims
- 0691US9165802B2Methods for cleaving a bonded wafer structureSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2012·Granted Oct 20, 2015·9 cites·10 claims
- 0790US10468295B2High resistivity silicon-on-insulator structure and method of manufacture thereofSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Nov 5, 2019·7 cites·16 claims
- 0890US10361097B2Apparatus for stressing semiconductor substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2013·Granted Jul 23, 2019·6 cites·17 claims
- 0989US10224233B2High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He-N2 co-implantationSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Mar 5, 2019·5 cites·21 claims
- 1089US10072892B2Semiconductor wafer support ring for heat treatmentSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Sep 11, 2018·5 cites·3 claims
- 1189US10066314B2Crystal growing systems and methods including a transparent crucibleSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Sep 4, 2018·2 cites·18 claims
- 1289US9583363B2Processes and apparatus for preparing heterostructures with reduced strain by radial distensionSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2013·Granted Feb 28, 2017·5 cites·19 claims
- 1388US10315337B2Methods and system for controlling a surface profile of a waferSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Jun 11, 2019·5 cites·22 claims
- 1488US10290533B2Thermally stable charge trapping layer for use in manufacture of semiconductor-on-insulator structuresSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted May 14, 2019·6 cites·64 claims
- 1588US9401271B2Susceptor assemblies for supporting wafers in a reactor apparatusSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2013·Granted Jul 26, 2016·11 cites·20 claims
- 1687US9343533B2Direct formation of graphene on semiconductor substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2014·Granted May 17, 2016·6 cites·48 claims
- 1786US10654145B2Methods and systems for polishing pad controlSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted May 19, 2020·2 cites·13 claims
- 1886US10403541B2High resistivity silicon-on-insulator substrate comprising a charge trapping layer formed by He—N2 co-implantationSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Sep 3, 2019·3 cites·25 claims
- 1985US10312134B2High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate lossSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Jun 4, 2019·3 cites·11 claims
- 2082US10083855B2Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si depositionSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Sep 25, 2018·3 cites·30 claims
- 2181US10573517B2Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobaltSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Feb 25, 2020·3 cites·19 claims
- 2281US10145011B2Substrate processing systems having multiple gas flow controllersSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Dec 4, 2018·3 cites·17 claims
- 2381US9925755B2Clamping apparatus for cleaving a bonded wafer structure and methods for cleavingSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Mar 27, 2018·2 cites·19 claims
- 2481US9853133B2Method of manufacturing high resistivity silicon-on-insulator substrateSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2015·Granted Dec 26, 2017·4 cites·32 claims
- 2580US9881832B2Handle substrate for use in manufacture of semiconductor-on-insulator structure and method of manufacturing thereofSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2016·Granted Jan 30, 2018·3 cites·20 claims
- 2679US9665931B2Air pocket detection methods and systemsSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2012·Granted May 30, 2017·4 cites·24 claims
- 2779US9601395B2Methods for post-epitaxial warp prediction and controlSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2012·Granted Mar 21, 2017·4 cites·11 claims
- 2878US10378121B2Crystal pulling system and method for inhibiting precipitate build-up in exhaust flow pathSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Aug 13, 2019·1 cites·21 claims
- 2977US11111602B2Nitrogen doped and vacancy dominated silicon ingot and thermally treated wafer formed therefrom having radially uniformly distributed oxygen precipitation density and sizeSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Sep 7, 2021·2 cites·9 claims
- 3077US9566687B2Center flex single side polishing head having recess and capSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2014·Granted Feb 14, 2017·4 cites·22 claims
- 3176US10546771B2High resistivity silicon-on-insulator substrate having enhanced charge trapping efficiencySUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Jan 28, 2020·1 cites·37 claims
- 3274US10062158B2Wafer nanotopography metrology for lithography based on thickness mapsSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Aug 28, 2018·2 cites·18 claims
- 3372US10192778B2Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereofSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Jan 29, 2019·1 cites·23 claims
- 3471US10453703B2Method of treating silicon wafers to have intrinsic gettering and gate oxide integrity yieldSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Oct 22, 2019·1 cites·15 claims
- 3570US11043395B2Methods for processing semiconductor wafers having a polycrystalline finishSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Jun 22, 2021·1 cites·12 claims
- 3670US10026642B2Semiconductor on insulator structure comprising a sacrificial layer and method of manufacture thereofSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Jul 17, 2018·1 cites·17 claims
- 3769US10483379B2High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate lossSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Nov 19, 2019·1 cites·24 claims
- 3869US10128146B2Semiconductor substrate polishing methods and slurries and methods for manufacturing silicon on insulator structuresSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Nov 13, 2018·1 cites·13 claims
- 3966US10483152B2High resistivity semiconductor-on-insulator wafer and a method of manufacturingSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Nov 19, 2019·1 cites·28 claims
- 4066US9789421B2Induction heater system for a fluidized bed reactorSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2014·Granted Oct 17, 2017·1 cites·17 claims
- 4165US9899499B2High resistivity silicon-on-insulator wafer manufacturing method for reducing substrate lossSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Feb 20, 2018·1 cites·17 claims
- 4264US10475695B2High resistivity silicon-on-insulator substrate comprising an isolation regionSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Nov 12, 2019·0 cites·16 claims
- 4364US9768056B2Method of manufacturing high resistivity SOI wafers with charge trapping layers based on terminated Si depositionSUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2014·Granted Sep 19, 2017·1 cites·57 claims
- 4464US9330014B2Method and system for full resolution real-time data loggingSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2013·Granted May 3, 2016·2 cites·18 claims
- 4564US9180569B2Double side polisher with platen parallelism controlSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2013·Granted Nov 10, 2015·1 cites·22 claims
- 4663US10600634B2Semiconductor substrate polishing methods with dynamic controlSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Mar 24, 2020·2 cites·17 claims
- 4763US10381260B2Method of manufacturing high resistivity semiconductor-on-insulator wafers with charge trapping layersSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Aug 13, 2019·1 cites·18 claims
- 4863US9939511B2Surface photovoltage calibration standardSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted Apr 10, 2018·2 cites·36 claims
- 4962US10269617B2High resistivity silicon-on-insulator substrate comprising an isolation regionSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2017·Granted Apr 23, 2019·0 cites·17 claims
- 5061US10490464B2Methods for assessing semiconductor structuresSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2018·Granted Nov 26, 2019·0 cites·20 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when SUNEDISON SEMICONDUCTOR LTD UEN201334164H files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →