Assignee
SUPERNOVA OPTOELECTRONICS CORP
TW·17 granted patents·3 pending applications·256 citations·filing 2003–2006
Top patents by PatentIndex Score
20 records- 0193US7453098B2Vertical electrode structure of gallium nitride based light emitting diodeSUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Granted Nov 18, 2008·22 cites·6 claims
- 0286USD535264SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Jan 16, 2007·36 cites·1 claims
- 0381USD534134SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Dec 26, 2006·28 cites·1 claims
- 0480USD532756SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Nov 28, 2006·27 cites·1 claims
- 0579USD532757SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Nov 28, 2006·25 cites·1 claims
- 0677US6933160B2Method for manufacturing of a vertical light emitting device structureSUPERNOVA OPTOELECTRONICS CORP·Filed 2003·Granted Aug 23, 2005·23 cites·19 claims
- 0767US7285800B2Light-emitting gallium nitride-based III-V group compound semiconductor device with high light extraction efficiencySUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Oct 23, 2007·19 cites·9 claims
- 0863USD533847SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Dec 19, 2006·13 cites·1 claims
- 0962US7772607B2GaN-series light emitting diode with high light efficiencySUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Granted Aug 10, 2010·4 cites·18 claims
- 1062US7473570B2Method for forming epitaxial layers of gallium nitride-based compound semiconductorsSUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Granted Jan 6, 2009·1 cites·5 claims
- 1162US7154163B2Epitaxial structure of gallium nitride series semiconductor device utilizing two buffer layersSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Dec 26, 2006·6 cites·10 claims
- 1261USD534506SElectrode layerSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Granted Jan 2, 2007·12 cites·1 claims
- 1360US7098543B2Flip-chip packaged SMD-type LED with antistatic function and having no wire bondingSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Aug 29, 2006·9 cites·35 claims
- 1459US7001824B2Gallium nitride vertical light emitting diode structure and method of separating a substrate and a thin film in the structureSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Feb 21, 2006·8 cites·7 claims
- 1559US6992331B2Gallium nitride based compound semiconductor light-emitting deviceSUPERNOVA OPTOELECTRONICS CORP·Filed 2003·Granted Jan 31, 2006·13 cites·12 claims
- 1656US7119374B2Gallium nitride based light emitting device and the fabricating method for the sameSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Oct 10, 2006·5 cites·5 claims
- 1749US2006141753A1Epitaxial structure of gallium nitride series semiconductor device and process of manufacturing the sameSUPERNOVA OPTOELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 1848US2005161699A1Method for manufacturing of a vertical light emitting device structureSUPERNOVA OPTOELECTRONICS CORP·Filed 2005·Application pending·0 cites
- 1941US7208752B2Structure and manufacturing of gallium nitride light emitting diodeSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Granted Apr 24, 2007·5 cites·25 claims
- 2034US2005236636A1GaN-based light-emitting diode structureSUPERNOVA OPTOELECTRONICS CORP·Filed 2004·Application pending·0 cites
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