Assignee
TAIWAN SEMICONDUCTOR MAUFACTUR
US·5 granted patents·530 citations·filing 1998–2004
Top patents by PatentIndex Score
5 records- 0198US6037018AShallow trench isolation filled by high density plasma chemical vapor depositionTAIWAN SEMICONDUCTOR MAUFACTUR·Filed 1998·Granted Mar 14, 2000·378 cites·18 claims
- 0284US6876894B1Forecast test-out of probed fabrication by using dispatching simulation methodTAIWAN SEMICONDUCTOR MAUFACTUR·Filed 2003·Granted Apr 5, 2005·51 cites·20 claims
- 0384US6309957B1Method of low-K/copper dual damasceneTAIWAN SEMICONDUCTOR MAUFACTUR·Filed 2000·Granted Oct 30, 2001·70 cites·26 claims
- 0460US6365523B1Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layersTAIWAN SEMICONDUCTOR MAUFACTUR·Filed 1998·Granted Apr 2, 2002·25 cites·24 claims
- 0559US6982458B2Method of making the selection gate in a split-gate flash EEPROM cell and its structureTAIWAN SEMICONDUCTOR MAUFACTUR·Filed 2004·Granted Jan 3, 2006·6 cites·5 claims
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