Assignee
TAIWAN SEMICONDUCTOR MFG CORP
CN·30 granted patents·512 citations·filing 1998–2004
Top patents by PatentIndex Score
30 records- 0190US6288943B1Method for programming and reading 2-bit p-channel ETOX-cells with non-connecting HSG islands as floating gateTAIWAN SEMICONDUCTOR MFG CORP·Filed 2000·Granted Sep 11, 2001·53 cites·12 claims
- 0283US6143607AMethod for forming flash memory of ETOX-cell programmed by band-to-band tunneling induced substrate hot electron and read by gate induced drain leakage currentTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Nov 7, 2000·46 cites·5 claims
- 0377US6181601B1Flash memory cell using p+/N-well diode with double poly floating gateTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Jan 30, 2001·37 cites·7 claims
- 0474US6207507B1Multi-level flash memory using triple well process and method of makingTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Mar 27, 2001·31 cites·4 claims
- 0573US6184159B1Interlayer dielectric planarization processTAIWAN SEMICONDUCTOR MFG CORP·Filed 1998·Granted Feb 6, 2001·49 cites·2 claims
- 0672US6346838B1Internal offset-canceled phase locked loop-based deskew bufferTAIWAN SEMICONDUCTOR MFG CORP·Filed 2001·Granted Feb 12, 2002·36 cites·2 claims
- 0771US6351837B1High speed built-in self-test circuit for DRAMSTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Feb 26, 2002·32 cites·7 claims
- 0870US6232180B1Split gate flash memory cellTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted May 15, 2001·28 cites·6 claims
- 0967US6399286B1Method of fabricating reduced critical dimension for conductive line and spaceTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Jun 4, 2002·33 cites·21 claims
- 1066US6477696B2Routing definition to optimize layout design of standard cellsTAIWAN SEMICONDUCTOR MFG CORP·Filed 2001·Granted Nov 5, 2002·11 cites·11 claims
- 1162US6133780ADigitally tunable voltage reference using a neuron MOSFETTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Oct 17, 2000·17 cites·7 claims
- 1257US6240015B1Method for reading 2-bit ETOX cells using gate induced drain leakage currentTAIWAN SEMICONDUCTOR MFG CORP·Filed 2000·Granted May 29, 2001·9 cites·5 claims
- 1356US6262447B1Single polysilicon DRAM cell and array with current gainTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Jul 17, 2001·13 cites·11 claims
- 1455US6146968AMethod for forming a crown capacitorTAIWAN SEMICONDUCTOR MFG CORP·Filed 1998·Granted Nov 14, 2000·16 cites·6 claims
- 1554US7002213B2Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currentsTAIWAN SEMICONDUCTOR MFG CORP·Filed 2003·Granted Feb 21, 2006·6 cites·8 claims
- 1654US6215156B1Electrostatic discharge protection device with resistive drain structureTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Apr 10, 2001·17 cites·4 claims
- 1749US6281550B1Transistor and logic circuit of thin silicon-on-insulator wafers based on gate induced drain leakage currentsTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Aug 28, 2001·11 cites·10 claims
- 1849US6136691AIn situ plasma clean for tungsten etching backTAIWAN SEMICONDUCTOR MFG CORP·Filed 1998·Granted Oct 24, 2000·16 cites·5 claims
- 1948US6144075ACMOS inverter using gate induced drain leakage currentTAIWAN SEMICONDUCTOR MFG CORP·Filed 1998·Granted Nov 7, 2000·10 cites·14 claims
- 2047US6133604ANOR array architecture and operation methods for ETOX cells capable of full EEPROM functionsTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Oct 17, 2000·10 cites·11 claims
- 2146US6396751B1Semiconductor device comprising a test structureTAIWAN SEMICONDUCTOR MFG CORP·Filed 2001·Granted May 28, 2002·6 cites·9 claims
- 2244US6319823B1Process for forming a borderless via in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CORP·Filed 2000·Granted Nov 20, 2001·2 cites·11 claims
- 2343US7469057B2System and method for inspecting errors on a waferTAIWAN SEMICONDUCTOR MFG CORP·Filed 2004·Granted Dec 23, 2008·2 cites·20 claims
- 2440US6255713B1Current source using merged vertical bipolar transistor based on gate induced gate leakage currentTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Jul 3, 2001·6 cites·14 claims
- 2540US6133085AMethod for making a DRAM capacitor using a rotated photolithography maskTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Oct 17, 2000·6 cites·9 claims
- 2637US7078766B2Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currentsTAIWAN SEMICONDUCTOR MFG CORP·Filed 2001·Granted Jul 18, 2006·0 cites·8 claims
- 2734US6303960B1Low voltage flash memory cellTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Oct 16, 2001·3 cites·17 claims
- 2834US6162732AMethod for reducing capacitance depletion during hemispherical grain polysilicon synthesis for DRAMTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Dec 19, 2000·3 cites·4 claims
- 2932US6207545B1Method for forming a T-shaped plug having increased contact areaTAIWAN SEMICONDUCTOR MFG CORP·Filed 1998·Granted Mar 27, 2001·3 cites·10 claims
- 3030US6291294B1Method for making a stack bottom storage node having reduced crystallization of amorphous polysiliconTAIWAN SEMICONDUCTOR MFG CORP·Filed 1998·Granted Sep 18, 2001·0 cites·6 claims
Join the waitlist — get patent alerts
Get an alert when TAIWAN SEMICONDUCTOR MFG CORP files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →