Assignee
TERASHIMA YUKIO
JP·4 granted patents·5 citations·filing 2008–2009
Technology mixC30B4
Top patents by PatentIndex Score
4 records- 0178US8685163B2Method for growing silicon carbide single crystalTERASHIMA YUKIO·Filed 2008·Granted Apr 1, 2014·4 cites·7 claims
- 0267US8702864B2Method for growing silicon carbide single crystalTERASHIMA YUKIO·Filed 2009·Granted Apr 22, 2014·1 cites·10 claims
- 0356US8123857B2Method for producing p-type SiC semiconductor single crystalTERASHIMA YUKIO·Filed 2009·Granted Feb 28, 2012·0 cites·1 claims
- 0449US8287644B2Method for growing silicon carbide single crystalTERASHIMA YUKIO·Filed 2009·Granted Oct 16, 2012·0 cites·19 claims
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