Assignee
THIRD DIMENSION 3D SC INC
US·17 granted patents·376 citations·filing 1997–2008
Top patents by PatentIndex Score
17 records- 0195US7339252B2Semiconductor having thick dielectric regionsTHIRD DIMENSION 3D SC INC·Filed 2006·Granted Mar 4, 2008·25 cites·16 claims
- 0295US7023069B2Method for forming thick dielectric regions using etched trenchesTHIRD DIMENSION 3D SC INC·Filed 2004·Granted Apr 4, 2006·78 cites·14 claims
- 0392US7052982B2Method for manufacturing a superjunction device with wide mesasTHIRD DIMENSION 3D SC INC·Filed 2004·Granted May 30, 2006·60 cites·28 claims
- 0491US7354818B2Process for high voltage superjunction terminationTHIRD DIMENSION 3D SC INC·Filed 2005·Granted Apr 8, 2008·18 cites·13 claims
- 0591US7041560B2Method of manufacturing a superjunction device with conventional terminationsTHIRD DIMENSION 3D SC INC·Filed 2004·Granted May 9, 2006·49 cites·20 claims
- 0690US7439583B2Tungsten plug drain extensionTHIRD DIMENSION 3D SC INC·Filed 2005·Granted Oct 21, 2008·15 cites·12 claims
- 0790US6635906B1Voltage sustaining layer with opposite-doped islands for semi-conductor power devicesTHIRD DIMENSION 3D SC INC·Filed 1997·Granted Oct 21, 2003·56 cites·3 claims
- 0888US7704864B2Method of manufacturing a superjunction device with conventional terminationsTHIRD DIMENSION 3D SC INC·Filed 2006·Granted Apr 27, 2010·11 cites·21 claims
- 0988US7109110B2Method of manufacturing a superjunction deviceTHIRD DIMENSION 3D SC INC·Filed 2004·Granted Sep 19, 2006·35 cites·5 claims
- 1080US7364994B2Method for manufacturing a superjunction device with wide mesasTHIRD DIMENSION 3D SC INC·Filed 2006·Granted Apr 29, 2008·6 cites·22 claims
- 1176US7271067B2Voltage sustaining layer with opposite-doped islands for semiconductor power devicesTHIRD DIMENSION 3D SC INC·Filed 2006·Granted Sep 18, 2007·4 cites·6 claims
- 1271US7504305B2Technique for forming the deep doped regions in superjunction devicesTHIRD DIMENSION 3D SC INC·Filed 2006·Granted Mar 17, 2009·2 cites·28 claims
- 1368US7199006B2Planarization method of manufacturing a superjunction deviceTHIRD DIMENSION 3D SC INC·Filed 2004·Granted Apr 3, 2007·11 cites·20 claims
- 1467US7498614B2Voltage sustaining layer with opposite-doped islands for semiconductor power devicesTHIRD DIMENSION 3D SC INC·Filed 2007·Granted Mar 3, 2009·2 cites·4 claims
- 1554US7227197B2Semiconductor high-voltage devicesTHIRD DIMENSION 3D SC INC·Filed 2004·Granted Jun 5, 2007·3 cites·7 claims
- 1653US7772086B2Process for high voltage superjunction terminationTHIRD DIMENSION 3D SC INC·Filed 2008·Granted Aug 10, 2010·0 cites·4 claims
- 1753US7622787B2Process for high voltage superjunction terminationTHIRD DIMENSION 3D SC INC·Filed 2008·Granted Nov 24, 2009·1 cites·3 claims
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