Assignee
TORIMI SATOSHI
JP·4 granted patents·2 citations·filing 2011–2011
Top patents by PatentIndex Score
4 records- 0177US9725822B2Method for epitaxial growth of monocrystalline silicon carbide using a feed material including a surface layer containing a polycrystalline silicon carbide with a 3C crystal polymorphTORIMI SATOSHI·Filed 2011·Granted Aug 8, 2017·1 cites·17 claims
- 0276US10358741B2Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbideTORIMI SATOSHI·Filed 2011·Granted Jul 23, 2019·1 cites·8 claims
- 0352US9447517B2Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline siliconTORIMI SATOSHI·Filed 2011·Granted Sep 20, 2016·0 cites·12 claims
- 0438US9252206B2Unit for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbideTORIMI SATOSHI·Filed 2011·Granted Feb 2, 2016·0 cites·22 claims
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