Assignee
TRANSPHORM JAPAN INC
JP·24 granted patents·354 citations·filing 2012–2017
Top patents by PatentIndex Score
24 records- 0197US9818840B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2017·Granted Nov 14, 2017·15 cites·20 claims
- 0296US9685338B2Compound semiconductor device and method of manufacturing the sameTRANSPHORM JAPAN INC·Filed 2016·Granted Jun 20, 2017·18 cites·8 claims
- 0396US9640648B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2016·Granted May 2, 2017·12 cites·11 claims
- 0496US9299822B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2013·Granted Mar 29, 2016·18 cites·10 claims
- 0596US9142638B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2015·Granted Sep 22, 2015·12 cites·20 claims
- 0696US8933489B2Compound semiconductor device and manufacturing method of the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Jan 13, 2015·26 cites·12 claims
- 0795US9231075B2Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatusTRANSPHORM JAPAN INC·Filed 2015·Granted Jan 5, 2016·13 cites·17 claims
- 0895US9035356B2Semiconductor device and manufacturing method of semiconductor deviceTRANSPHORM JAPAN INC·Filed 2013·Granted May 19, 2015·16 cites·10 claims
- 0995US8883581B2Compound semiconductor device and method for manufacturing the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Nov 11, 2014·20 cites·19 claims
- 1094US9425268B2Compound semiconductor device and method of manufacturing the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Aug 23, 2016·17 cites·10 claims
- 1194US9006787B2Semiconductor device including gate electrode provided over active region in p-type nitride semiconductor layer and method of manufacturing the same, and power supply apparatusTRANSPHORM JAPAN INC·Filed 2013·Granted Apr 14, 2015·13 cites·24 claims
- 1294US8957453B2Method of manufacturing a semiconductor device and semiconductor deviceTRANSPHORM JAPAN INC·Filed 2013·Granted Feb 17, 2015·17 cites·19 claims
- 1394US8890206B2Compound semiconductor device and method for manufacturing the sameTRANSPHORM JAPAN INC·Filed 2012·Granted Nov 18, 2014·19 cites·4 claims
- 1493US8878571B2Driver circuit of Schottky transistorTRANSPHORM JAPAN INC·Filed 2013·Granted Nov 4, 2014·13 cites·3 claims
- 1593US8836380B2Bootstrap circuitTRANSPHORM JAPAN INC·Filed 2013·Granted Sep 16, 2014·13 cites·6 claims
- 1691US9620616B2Semiconductor device and method of manufacturing a semiconductor deviceTRANSPHORM JAPAN INC·Filed 2014·Granted Apr 11, 2017·12 cites·20 claims
- 1791US9099351B2Compound semiconductor device and method of manufacturing the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Aug 4, 2015·13 cites·7 claims
- 1891US9099545B2Compound semiconductor device and method of manufacturing sameTRANSPHORM JAPAN INC·Filed 2013·Granted Aug 4, 2015·13 cites·14 claims
- 1990US9142658B2Compound semiconductor device and method of manufacturing the sameTRANSPHORM JAPAN INC·Filed 2013·Granted Sep 22, 2015·13 cites·8 claims
- 2090US9059136B2Compound semiconductor device and method of manufacturing the sameTRANSPHORM JAPAN INC·Filed 2014·Granted Jun 16, 2015·13 cites·12 claims
- 2188US9136107B2Semiconductor device and method for manufacturing semiconductor deviceTRANSPHORM JAPAN INC·Filed 2013·Granted Sep 15, 2015·18 cites·6 claims
- 2287US9349805B2III-n device with dual gates and field plateTRANSPHORM JAPAN INC·Filed 2014·Granted May 24, 2016·14 cites·10 claims
- 2387US8773176B2Driving method and driving circuit of schottky type transistorTRANSPHORM JAPAN INC·Filed 2012·Granted Jul 8, 2014·14 cites·14 claims
- 2474US9224848B2Compound semiconductor device and manufacturing method of the sameTRANSPHORM JAPAN INC·Filed 2014·Granted Dec 29, 2015·2 cites·20 claims
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