Assignee
UDAGAWA TAKASHI
JP·6 granted patents·7 citations·filing 2006–2012
Top patents by PatentIndex Score
6 records- 0170US8084781B2Compound semiconductor deviceUDAGAWA TAKASHI·Filed 2006·Granted Dec 27, 2011·4 cites·16 claims
- 0267US8216367B2Method for production of silicon carbide layer, gallium nitride semiconductor device and silicon substrateUDAGAWA TAKASHI·Filed 2006·Granted Jul 10, 2012·2 cites·4 claims
- 0361US8299451B2Semiconductor light-emitting diodeUDAGAWA TAKASHI·Filed 2006·Granted Oct 30, 2012·1 cites·6 claims
- 0445US9076913B2Group iii nitride semiconductor light-emitting elementUDAGAWA TAKASHI·Filed 2012·Granted Jul 7, 2015·0 cites·14 claims
- 0542US9324912B2Group III nitride semiconductor light-emitting element and method for producing sameUDAGAWA TAKASHI·Filed 2012·Granted Apr 26, 2016·0 cites·12 claims
- 0642US8071991B2Light-emitting diode and light-emitting diode lampUDAGAWA TAKASHI·Filed 2006·Granted Dec 6, 2011·0 cites·15 claims
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