Assignee
UMEDA HIDEKAZU
JP·4 granted patents·23 citations·filing 2009–2012
Top patents by PatentIndex Score
4 records- 0188US8692292B2Semiconductor device including separated gate electrode and conductive layerUMEDA HIDEKAZU·Filed 2012·Granted Apr 8, 2014·11 cites·12 claims
- 0275US8872227B2Nitride semiconductor deviceUMEDA HIDEKAZU·Filed 2012·Granted Oct 28, 2014·4 cites·22 claims
- 0375US8390029B2Semiconductor device for reducing and/or preventing current collapseUMEDA HIDEKAZU·Filed 2009·Granted Mar 5, 2013·6 cites·8 claims
- 0465US8569797B2Field effect transistor and method of manufacturing the sameUMEDA HIDEKAZU·Filed 2011·Granted Oct 29, 2013·2 cites·19 claims
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