Assignee

UNITED MICROELECTRONICWS CORP

TW·1 granted patent·64 citations·filing 1995–1995

Technology mixH10D1

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0185US5828103ARecessed lightly doped drain (LDD) for higher performance MOSFETUNITED MICROELECTRONICWS CORP·Filed 1995·Granted Oct 27, 1998·64 cites·4 claims

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