Assignee
UNITED SEMICONDUCTOR CORP
TW·130 granted patents·2,996 citations·filing 1997–1999
Top patents by PatentIndex Score
130 records- 0196US6200897B1Method for manufacturing even dielectric layerUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Mar 13, 2001·346 cites·11 claims
- 0295US6207504B1Method of fabricating flash erasable programmable read only memoryUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Mar 27, 2001·149 cites·22 claims
- 0395US6171909B1Method for forming a stacked gateUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Jan 9, 2001·141 cites·9 claims
- 0491US6197680B1Method for forming conductive lineUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Mar 6, 2001·232 cites·27 claims
- 0588US6153472AMethod for fabricating a flash memoryUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Nov 28, 2000·65 cites·20 claims
- 0688US5899719ASub-micron MOSFETUNITED SEMICONDUCTOR CORP·Filed 1997·Granted May 4, 1999·72 cites·25 claims
- 0783US6171976B1Method of chemical-mechanical polishingUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Jan 9, 2001·65 cites·11 claims
- 0882US6165694AMethod for preventing the formation of recesses in borophosphosilicate glassUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Dec 26, 2000·88 cites·10 claims
- 0981US6069058AShallow trench isolation for semiconductor devicesUNITED SEMICONDUCTOR CORP·Filed 1997·Granted May 30, 2000·64 cites·24 claims
- 1079US6001707AMethod for forming shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Dec 14, 1999·56 cites·20 claims
- 1178US6159808AMethod of forming self-aligned DRAM cellUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Dec 12, 2000·40 cites·12 claims
- 1277US6191004B1Method of fabricating shallow trench isolation using high density plasma CVDUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Feb 20, 2001·52 cites·12 claims
- 1376US5998259AMethod of fabricating dual cylindrical capacitorUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Dec 7, 1999·34 cites·15 claims
- 1476US5972752AMethod of manufacturing a flash memory cell having a tunnel oxide with a long narrow top profileUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Oct 26, 1999·34 cites·17 claims
- 1575US6040232AMethod of manufacturing shallow trench isolationUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Mar 21, 2000·48 cites·11 claims
- 1674US5960285AFlash EEPROM deviceUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Sep 28, 1999·34 cites·26 claims
- 1773US5972764AMethod for manufacturing MOS transistorUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Oct 26, 1999·35 cites·14 claims
- 1873US5968842ATechniques for reduced dishing in chemical mechanical polishingUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Oct 19, 1999·46 cites·16 claims
- 1972US6063207ASurface treatment for bonding padUNITED SEMICONDUCTOR CORP·Filed 1999·Granted May 16, 2000·48 cites·14 claims
- 2071US5966600ADRAM process with a multilayer stack structureUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Oct 12, 1999·41 cites·23 claims
- 2170US6035530AMethod of manufacturing interconnectUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Mar 14, 2000·37 cites·19 claims
- 2269US5891783AMethod of reducing fringe capacitanceUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Apr 6, 1999·28 cites·14 claims
- 2369US5872036AMethod of manufacturing a split-gate flash memory cellUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Feb 16, 1999·26 cites·4 claims
- 2468US6284677B1Method of forming fluorosilicate glass (FSG) layers with moisture-resistant capabilityUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Sep 4, 2001·35 cites·5 claims
- 2568US6077767AModified implementation of air-gap low-K dielectric for unlanded viaUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Jun 20, 2000·39 cites·14 claims
- 2668US6025229AMethod of fabricating split-gate source side injection flash memory arrayUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Feb 15, 2000·26 cites·26 claims
- 2767US6159840AFabrication method for a dual damascene comprising an air-gapUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Dec 12, 2000·36 cites·13 claims
- 2867US6037234AMethod of fabricating capacitorUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Mar 14, 2000·34 cites·8 claims
- 2965US6066572AMethod of removing carbon contamination on semiconductor substrateUNITED SEMICONDUCTOR CORP·Filed 1999·Granted May 23, 2000·29 cites·16 claims
- 3064US6153471AMethod of fabricating flash memoryUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Nov 28, 2000·21 cites·12 claims
- 3164US6107159AMethod for fabricating a shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Aug 22, 2000·31 cites·22 claims
- 3263US6100183AMethod for fabricating a viaUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Aug 8, 2000·29 cites·19 claims
- 3363US6060357AMethod of manufacturing flash memoryUNITED SEMICONDUCTOR CORP·Filed 1999·Granted May 9, 2000·20 cites·20 claims
- 3462US6017796AMethod of fabricating flash electrically-erasable and programmable read-only memory (EEPROM) deviceUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Jan 25, 2000·21 cites·22 claims
- 3561US6051469AMethod of fabricating bit lineUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Apr 18, 2000·18 cites·19 claims
- 3660US5937309AMethod for fabricating shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Aug 10, 1999·25 cites·13 claims
- 3759US6159789AMethod for fabricating capacitorUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Dec 12, 2000·16 cites·19 claims
- 3859US6136650AMethod of forming three-dimensional flash memory structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Oct 24, 2000·19 cites·14 claims
- 3959US5960282AMethod for fabricating a dynamic random access memory with a vertical pass transistorUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Sep 28, 1999·17 cites·20 claims
- 4058US6008089AMethod of fabricating a split gate flash memory deviceUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Dec 28, 1999·15 cites·13 claims
- 4158US5981325AMethod for manufacturing CMOSUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Nov 9, 1999·19 cites·8 claims
- 4258US5932910AFlash memory cell structure having electrically isolated stacked gateUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Aug 3, 1999·17 cites·6 claims
- 4358US5915171AProcess of fabricating an antifuse structureUNITED SEMICONDUCTOR CORP·Filed 1997·Granted Jun 22, 1999·24 cites·11 claims
- 4457US6133143AMethod of manufacturing interconnectUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Oct 17, 2000·22 cites·11 claims
- 4557US6030882AMethod for manufacturing shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Feb 29, 2000·21 cites·19 claims
- 4656US5981402AMethod of fabricating shallow trench isolationUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Nov 9, 1999·24 cites·16 claims
- 4756US5882972AMethod of fabricating a buried bit lineUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Mar 16, 1999·17 cites·12 claims
- 4855US5989987AMethod of forming a self-aligned contact in semiconductor fabricationsUNITED SEMICONDUCTOR CORP·Filed 1998·Granted Nov 23, 1999·23 cites·17 claims
- 4954US6221736B1Fabrication method for a shallow trench isolation structureUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Apr 24, 2001·19 cites·13 claims
- 5053US6114204AMethod of fabricating high density flash memory with self-aligned tunneling windowUNITED SEMICONDUCTOR CORP·Filed 1999·Granted Sep 5, 2000·12 cites·15 claims
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