Assignee
UNITED SILICON INC
US·52 granted patents·882 citations·filing 1998–1999
Top patents by PatentIndex Score
52 records- 0185US6114238ASelf-aligned metal nitride for copper passivationUNITED SILICON INC·Filed 1998·Granted Sep 5, 2000·82 cites·16 claims
- 0278US6020606AStructure of a memory cellUNITED SILICON INC·Filed 1998·Granted Feb 1, 2000·39 cites·16 claims
- 0378US6001716AFabricating method of a metal gateUNITED SILICON INC·Filed 1998·Granted Dec 14, 1999·40 cites·3 claims
- 0475US6069037AMethod of manufacturing embedded DRAMUNITED SILICON INC·Filed 1998·Granted May 30, 2000·37 cites·22 claims
- 0574US6180493B1Method for forming shallow trench isolation regionUNITED SILICON INC·Filed 1999·Granted Jan 30, 2001·46 cites·27 claims
- 0674US5994197AMethod for manufacturing dynamic random access memory capable of increasing the storage capacity of the capacitorUNITED SILICON INC·Filed 1999·Granted Nov 30, 1999·34 cites·20 claims
- 0773US6169017B1Method to increase contact areaUNITED SILICON INC·Filed 1999·Granted Jan 2, 2001·33 cites·30 claims
- 0872US6069032ASalicide processUNITED SILICON INC·Filed 1999·Granted May 30, 2000·32 cites·20 claims
- 0971US6165279AMethod for cleaning a semiconductor waferUNITED SILICON INC·Filed 1998·Granted Dec 26, 2000·42 cites·11 claims
- 1068US6194279B1Fabrication method for gate spacerUNITED SILICON INC·Filed 1999·Granted Feb 27, 2001·30 cites·22 claims
- 1167US6191029B1Damascene processUNITED SILICON INC·Filed 1999·Granted Feb 20, 2001·39 cites·19 claims
- 1263US6156608AMethod of manufacturing cylindrical shaped capacitorUNITED SILICON INC·Filed 1998·Granted Dec 5, 2000·30 cites·8 claims
- 1359US6180477B1Method of fabricating field effect transistor with silicide sidewall spacersUNITED SILICON INC·Filed 1999·Granted Jan 30, 2001·18 cites·10 claims
- 1458US6127228AMethod of forming buried bit lineUNITED SILICON INC·Filed 1999·Granted Oct 3, 2000·24 cites·8 claims
- 1557US6153528AMethod of fabricating a dual damascene structureUNITED SILICON INC·Filed 1998·Granted Nov 28, 2000·26 cites·20 claims
- 1657US6093600AMethod of fabricating a dynamic random-access memory deviceUNITED SILICON INC·Filed 1999·Granted Jul 25, 2000·24 cites·10 claims
- 1757US6010943AMethod of fabricating a cylindrical capacitorUNITED SILICON INC·Filed 1998·Granted Jan 4, 2000·17 cites·18 claims
- 1856US5963819AMethod of fabricating shallow trench isolationUNITED SILICON INC·Filed 1998·Granted Oct 5, 1999·24 cites·9 claims
- 1954US6150237AMethod of fabricating STIUNITED SILICON INC·Filed 1999·Granted Nov 21, 2000·19 cites·17 claims
- 2054US6136613AMethod for recycling monitoring control wafersUNITED SILICON INC·Filed 1998·Granted Oct 24, 2000·22 cites·8 claims
- 2153US6060361AMethod for preventing dopant diffusion in dual gate deviceUNITED SILICON INC·Filed 1998·Granted May 9, 2000·14 cites·9 claims
- 2252US6065869AMethod of in-line temperature monitoringUNITED SILICON INC·Filed 1999·Granted May 23, 2000·24 cites·21 claims
- 2351US5998255AMethod of fabricating DRAM capacitorUNITED SILICON INC·Filed 1998·Granted Dec 7, 1999·11 cites·30 claims
- 2450US6111293ASilicon-on-insulator MOS structureUNITED SILICON INC·Filed 1998·Granted Aug 29, 2000·12 cites·16 claims
- 2547US6214741B1Method of fabricating a bit line of flash memoryUNITED SILICON INC·Filed 1999·Granted Apr 10, 2001·10 cites·20 claims
- 2647US6100142AMethod of fabricating sub-quarter-micron salicide polysiliconUNITED SILICON INC·Filed 1999·Granted Aug 8, 2000·10 cites·21 claims
- 2746US6294314B2Method of fabricating an opening with deep ultra-violet photoresistUNITED SILICON INC·Filed 1998·Granted Sep 25, 2001·12 cites·18 claims
- 2844US6180537B1Method of fabricating dielectric layer in alignment marker areaUNITED SILICON INC·Filed 1999·Granted Jan 30, 2001·15 cites·16 claims
- 2944US6175135B1Trench contact structure of silicon on insulatorUNITED SILICON INC·Filed 1998·Granted Jan 16, 2001·8 cites·4 claims
- 3043US6225642B1Buried channel vertical double diffusion MOS deviceUNITED SILICON INC·Filed 1998·Granted May 1, 2001·8 cites·13 claims
- 3143US6015744AMethod of manufacturing a shallow trench isolation alignment markUNITED SILICON INC·Filed 1998·Granted Jan 18, 2000·15 cites·10 claims
- 3242US5989976AFabrication method for a field emission display emitterUNITED SILICON INC·Filed 1998·Granted Nov 23, 1999·5 cites·19 claims
- 3341US6130011AMethod of fabricating implantation maskUNITED SILICON INC·Filed 1998·Granted Oct 10, 2000·6 cites·11 claims
- 3440US6110795AMethod of fabricating shallow trench isolationUNITED SILICON INC·Filed 1998·Granted Aug 29, 2000·8 cites·7 claims
- 3540US5932333AMethod for manufacturing charge storage electrodeUNITED SILICON INC·Filed 1998·Granted Aug 3, 1999·6 cites·28 claims
- 3639US6180507B1Method of forming interconnectionsUNITED SILICON INC·Filed 1998·Granted Jan 30, 2001·9 cites·17 claims
- 3739US6077771AMethod for forming a barrier layerUNITED SILICON INC·Filed 1998·Granted Jun 20, 2000·7 cites·19 claims
- 3835US6020251AMethod of forming buried diffusion junctions in conjunction with shallow-trench isolation structures in a semiconductor deviceUNITED SILICON INC·Filed 1998·Granted Feb 1, 2000·5 cites·28 claims
- 3934US6046061AMethod of inspecting wafer water markUNITED SILICON INC·Filed 1998·Granted Apr 4, 2000·5 cites·18 claims
- 4033US6213444B1Vibration damperUNITED SILICON INC·Filed 1999·Granted Apr 10, 2001·4 cites·21 claims
- 4133US6200886B1Fabricating process for polysilicon gateUNITED SILICON INC·Filed 1999·Granted Mar 13, 2001·5 cites·5 claims
- 4233US6051153AEtching methodUNITED SILICON INC·Filed 1998·Granted Apr 18, 2000·3 cites·13 claims
- 4332US6204147B1Method of manufacturing shallow trench isolationUNITED SILICON INC·Filed 1999·Granted Mar 20, 2001·4 cites·14 claims
- 4432US6179919B1Apparatus for performing chemical vapor depositionUNITED SILICON INC·Filed 1998·Granted Jan 30, 2001·2 cites·2 claims
- 4532US6124204AMethod of removing copper oxide within via holeUNITED SILICON INC·Filed 1998·Granted Sep 26, 2000·5 cites·4 claims
- 4631US5993299AMethod and apparatus of uninterrupted slurry supplyUNITED SILICON INC·Filed 1998·Granted Nov 30, 1999·6 cites·9 claims
- 4730US6187692B1Method for forming an insulating filmUNITED SILICON INC·Filed 1998·Granted Feb 13, 2001·2 cites·20 claims
- 4830US6162731AMethod of defining a conductive layerUNITED SILICON INC·Filed 1999·Granted Dec 19, 2000·0 cites·17 claims
- 4930US6043154AMethod for manufacturing charge storage electrodeUNITED SILICON INC·Filed 1998·Granted Mar 28, 2000·0 cites·20 claims
- 5029US6133091AMethod of fabricating a lower electrode of capacitorUNITED SILICON INC·Filed 1999·Granted Oct 17, 2000·1 cites·20 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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