Assignee
VANGUARD INT SEMICONDUCT CORP
TW·1,066 granted patents·108 pending applications·21,723 citations·filing 1995–2025
Top patents by PatentIndex Score
1,174 records- 0199US11152364B1Semiconductor structure and methods for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Oct 19, 2021·10 cites·28 claims
- 0299US5554557AMethod for fabricating a stacked capacitor with a self aligned node contact in a memory cellVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Sep 10, 1996·493 cites·25 claims
- 0398US11201234B1High electron mobility transistorVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Dec 14, 2021·10 cites·18 claims
- 0498US11152474B1Semiconductor device and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Oct 19, 2021·7 cites·21 claims
- 0598US6171923B1Method for fabricating a DRAM cell structure on an SOI wafer incorporating a two dimensional trench capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted Jan 9, 2001·219 cites·12 claims
- 0698US5943581AMethod of fabricating a buried reservoir capacitor structure for high-density dynamic random access memory (DRAM) circuitsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Aug 24, 1999·322 cites·26 claims
- 0798US5650351AMethod to form a capacitor having multiple pillars for advanced DRAMSVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Jul 22, 1997·417 cites·29 claims
- 0897US11049799B1Semiconductor structure and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Jun 29, 2021·7 cites·20 claims
- 0997US6358800B1Method of forming a MOSFET with a recessed-gate having a channel length beyond photolithography limitVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Mar 19, 2002·148 cites·8 claims
- 1097US6335257B1Method of making pillar-type structure on semiconductor substrateVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Jan 1, 2002·159 cites·10 claims
- 1196US11652477B2Voltage tracking circuits and electronic circuitsVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted May 16, 2023·4 cites·20 claims
- 1296US10002956B1High electron mobility transistorVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Jun 19, 2018·16 cites·13 claims
- 1396US6797933B1On-chip design-for-testing structure for CMOS APS (active pixel sensor) image sensorVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Sep 28, 2004·135 cites·1 claims
- 1496US6061296AMultiple data clock activation with programmable delay for use in multiple CAS latency memory devicesVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted May 9, 2000·280 cites·31 claims
- 1596US6057573ADesign for high density memory with relaxed metal pitchVANGUARD INT SEMICONDUCT CORP·Filed 1999·Granted May 2, 2000·209 cites·6 claims
- 1696US5981335AMethod of making stacked gate memory cell structureVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Nov 9, 1999·165 cites·16 claims
- 1796US5792687AMethod for fabricating high density integrated circuits using oxide and polysilicon spacersVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Aug 11, 1998·148 cites·23 claims
- 1896US5716883AMethod of making increased surface area, storage node electrode, with narrow spaces between polysilicon columnsVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Feb 10, 1998·164 cites·31 claims
- 1995US10964788B1Semiconductor device and operating method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Mar 30, 2021·11 cites·20 claims
- 2095US10930745B1Semiconductor structureVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Feb 23, 2021·11 cites·20 claims
- 2195US9054129B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2014·Granted Jun 9, 2015·18 cites·13 claims
- 2295US6596589B2Method of manufacturing a high coupling ratio stacked gate flash memory with an HSG-SI layerVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Jul 22, 2003·99 cites·14 claims
- 2395US6429123B1Method of manufacturing buried metal lines having ultra fine featuresVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Aug 6, 2002·92 cites·16 claims
- 2495US6391722B1Method of making nonvolatile memory having high capacitive coupling ratioVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted May 21, 2002·87 cites·21 claims
- 2595US6077756AOverlay target pattern and algorithm for layer-to-layer overlay metrology for semiconductor processingVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 20, 2000·262 cites·21 claims
- 2695US6071789AMethod for simultaneously fabricating a DRAM capacitor and metal interconnectionsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jun 6, 2000·265 cites·19 claims
- 2795US5843820AMethod of fabricating a new dynamic random access memory (DRAM) cell having a buried horizontal trench capacitorVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Dec 1, 1998·99 cites·30 claims
- 2894US11569657B1Protection circuitsVANGUARD INT SEMICONDUCT CORP·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
- 2994US10692786B1Semiconductor structuresVANGUARD INT SEMICONDUCT CORP·Filed 2019·Granted Jun 23, 2020·16 cites·23 claims
- 3094US10523002B2Electrostatic discharge protection circuitVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Dec 31, 2019·7 cites·15 claims
- 3194US9589971B1Anti-fuse one-time programmable memory cell and anti-fuse one-time programmable memory arrayVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Mar 7, 2017·36 cites·16 claims
- 3294US9437591B1Cross-domain electrostatic discharge protection deviceVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Sep 6, 2016·15 cites·16 claims
- 3394US8704300B1Semiconductor device and fabricating method thereofVANGUARD INT SEMICONDUCT CORP·Filed 2012·Granted Apr 22, 2014·22 cites·18 claims
- 3494US6340614B1Method of forming a DRAM cellVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted Jan 22, 2002·64 cites·20 claims
- 3594US5895740AMethod of forming contact holes of reduced dimensions by using in-situ formed polymeric sidewall spacersVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Apr 20, 1999·176 cites·20 claims
- 3694US5895239AMethod for fabricating dynamic random access memory (DRAM) by simultaneous formation of tungsten bit lines and tungsten landing plug contactsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Apr 20, 1999·132 cites·26 claims
- 3794US5688713AMethod of manufacturing a DRAM cell having a double-crown capacitor using polysilicon and nitride spacersVANGUARD INT SEMICONDUCT CORP·Filed 1996·Granted Nov 18, 1997·194 cites·20 claims
- 3893US11498097B2Piezoelectric micromachined ultrasonic transducer and method of fabricating the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Nov 15, 2022·3 cites·20 claims
- 3993US11387356B2Semiconductor structure and high-electron mobility transistor device having the sameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Jul 12, 2022·4 cites·29 claims
- 4093US10573734B1High electron mobility transistor and method for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2018·Granted Feb 25, 2020·12 cites·20 claims
- 4193US9525045B1Semiconductor devices and methods for forming the sameVANGUARD INT SEMICONDUCT CORP·Filed 2016·Granted Dec 20, 2016·10 cites·20 claims
- 4293US9129989B1Semiconductor device and method for manufacturing the sameVANGUARD INT SEMICONDUCT CORP·Filed 2015·Granted Sep 8, 2015·8 cites·11 claims
- 4393US6486939B2Electronically controlled universal phase-shifting mask for stepper exposure systemVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Nov 26, 2002·46 cites·32 claims
- 4493US5893734AMethod for fabricating capacitor-under-bit line (CUB) dynamic random access memory (DRAM) using tungsten landing plug contactsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Apr 13, 1999·112 cites·29 claims
- 4592US11637139B2Semiconductor device including light-collimating layer and biometric device using the sameVANGUARD INT SEMICONDUCT CORP·Filed 2022·Granted Apr 25, 2023·2 cites·15 claims
- 4692US11133246B1Semiconductor structure employing conductive paste on lead frameVANGUARD INT SEMICONDUCT CORP·Filed 2020·Granted Sep 28, 2021·3 cites·20 claims
- 4792US10103239B1High electron mobility transistor structureVANGUARD INT SEMICONDUCT CORP·Filed 2017·Granted Oct 16, 2018·9 cites·15 claims
- 4892US6559508B1ESD protection device for open drain I/O pad in integrated circuits with merged layout structureVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted May 6, 2003·76 cites·18 claims
- 4992US6465848B2Low-voltage-triggered electrostatic discharge protection device and relevant circuitryVANGUARD INT SEMICONDUCT CORP·Filed 2001·Granted Oct 15, 2002·72 cites·9 claims
- 5092US6384652B1Clock duty cycle correction circuitVANGUARD INT SEMICONDUCT CORP·Filed 2000·Granted May 7, 2002·60 cites·18 claims
Showing the top 50 of 1,174 patent records by PatentIndex Score.
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