Assignee
VELIADIS JOHN V
US·9 granted patents·27 citations·filing 2009–2016
Top patents by PatentIndex Score
9 records- 0190US8106422B2SiC avalanche photodiode with improved edge terminationVELIADIS JOHN V·Filed 2010·Granted Jan 31, 2012·7 cites·35 claims
- 0283US8130023B2System and method for providing symmetric, efficient bi-directional power flow and power conditioningVELIADIS JOHN V·Filed 2009·Granted Mar 6, 2012·11 cites·21 claims
- 0377US8105911B2Bipolar junction transistor guard ring structures and method of fabricating thereofVELIADIS JOHN V·Filed 2010·Granted Jan 31, 2012·4 cites·10 claims
- 0470US9293465B1Monolithic bi-directional current conducting device and method of making the sameVELIADIS JOHN V·Filed 2014·Granted Mar 22, 2016·2 cites·11 claims
- 0563US8110880B1Systems and methods for interconnect metallization using a stop-etch layerVELIADIS JOHN V·Filed 2009·Granted Feb 7, 2012·2 cites·11 claims
- 0662US8664048B2Semiconductor devices with minimized current flow differences and methods of sameVELIADIS JOHN V·Filed 2010·Granted Mar 4, 2014·1 cites·15 claims
- 0753US9960159B2Monolithic bi-directional current conducting device and method of making the sameVELIADIS JOHN V·Filed 2016·Granted May 1, 2018·0 cites·10 claims
- 0852US8110494B1Systems and methods for maximizing breakdown voltage in semiconductor devicesVELIADIS JOHN V·Filed 2009·Granted Feb 7, 2012·0 cites·3 claims
- 0949US8283749B2Bipolar junction transistor guard ring structures and method of fabricating thereofVELIADIS JOHN V·Filed 2012·Granted Oct 9, 2012·0 cites·10 claims
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