Assignee
VISHAY GEN SEMICONDUCTOR LLC
US·33 granted patents·6 pending applications·106 citations·filing 2006–2022
Top patents by PatentIndex Score
39 records- 0193US9281417B1GaN-based schottky diode having large bond pads and reduced contact resistanceVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted Mar 8, 2016·14 cites·14 claims
- 0292US11450534B2Packaging process for side-wall plating with a conductive filmVISHAY GEN SEMICONDUCTOR LLC·Filed 2020·Granted Sep 20, 2022·4 cites·20 claims
- 0388US11876003B2Semiconductor package and packaging process for side-wall plating with a conductive filmVISHAY GEN SEMICONDUCTOR LLC·Filed 2022·Granted Jan 16, 2024·1 cites·17 claims
- 0484US8049271B2Power semiconductor device having a voltage sustaining layer with a terraced trench formation of floating islandsVISHAY GEN SEMICONDUCTOR LLC·Filed 2010·Granted Nov 1, 2011·7 cites·16 claims
- 0581US7838985B2Semiconductor assembly that includes a power semiconductor die located on a cell defined by first and second patterned polymer layersVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted Nov 23, 2010·9 cites·6 claims
- 0679US9263820B2Electrical press-fit pin for a semiconductor moduleVISHAY GEN SEMICONDUCTOR LLC·Filed 2014·Granted Feb 16, 2016·13 cites·21 claims
- 0776US8048714B2Semiconductor device and method for manufacturing a semiconductor device having improved heat dissipation capabilitiesVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted Nov 1, 2011·8 cites·11 claims
- 0873US7736976B2Method for fabricating a power semiconductor device having a voltage sustaining layer with a terraced trench facilitating formation of floating islandsVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted Jun 15, 2010·4 cites·20 claims
- 0972US9202935B2Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage currentVISHAY GEN SEMICONDUCTOR LLC·Filed 2013·Granted Dec 1, 2015·2 cites·7 claims
- 1072US9018698B2Trench-based device with improved trench protectionVISHAY GEN SEMICONDUCTOR LLC·Filed 2012·Granted Apr 28, 2015·3 cites·13 claims
- 1171US7915728B2Subassembly that includes a power semiconductor die and a heat sink having an exposed surface portion thereofVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted Mar 29, 2011·5 cites·5 claims
- 1271US7755102B2High breakdown voltage diode and method of forming sameVISHAY GEN SEMICONDUCTOR LLC·Filed 2006·Granted Jul 13, 2010·5 cites·16 claims
- 1371US7560355B2Semiconductor wafer suitable for forming a semiconductor junction diode device and method of forming sameVISHAY GEN SEMICONDUCTOR LLC·Filed 2006·Granted Jul 14, 2009·4 cites·20 claims
- 1470US7737533B2Low voltage transient voltage suppressor with tapered recess extending into substrate of device allowing for reduced breakdown voltageVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted Jun 15, 2010·5 cites·9 claims
- 1567US11764075B2Package assembly for plating with selective moldingVISHAY GEN SEMICONDUCTOR LLC·Filed 2022·Granted Sep 19, 2023·0 cites·18 claims
- 1666US10163762B2Lead frame with conductive clip for mounting a semiconductor die with reduced clip shiftingVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted Dec 25, 2018·2 cites·19 claims
- 1766US9966429B2Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage currentVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted May 8, 2018·1 cites·17 claims
- 1866US9331142B2Zener diode having a polysilicon layer for improved reverse surge capability and decreased leakage currentVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted May 3, 2016·1 cites·7 claims
- 1963US7671611B2Apparatus, system and method for testing electronic elementsVISHAY GEN SEMICONDUCTOR LLC·Filed 2008·Granted Mar 2, 2010·2 cites·5 claims
- 2062US9537017B2Process for forming a planar diode using one maskVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted Jan 3, 2017·1 cites·4 claims
- 2160US7719096B2Semiconductor device and method for manufacturing a semiconductor deviceVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Granted May 18, 2010·2 cites·18 claims
- 2259US8975719B2Process for forming a planar diode using one maskVISHAY GEN SEMICONDUCTOR LLC·Filed 2013·Granted Mar 10, 2015·1 cites·4 claims
- 2356US11393699B2Packaging process for plating with selective moldingVISHAY GEN SEMICONDUCTOR LLC·Filed 2020·Granted Jul 19, 2022·0 cites·10 claims
- 2454USD573116SBridge rectifier package with heat sinkVISHAY GEN SEMICONDUCTOR LLC·Filed 2006·Granted Jul 15, 2008·7 cites·1 claims
- 2553US2014357059A1Schottky rectifierVISHAY GEN SEMICONDUCTOR LLC·Filed 2014·Application pending·0 cites
- 2650US8865526B2Semiconductor device and method for manufacturing a semiconductor deviceVISHAY GEN SEMICONDUCTOR LLC·Filed 2013·Granted Oct 21, 2014·0 cites·5 claims
- 2748USD616387SBridge rectifier packageVISHAY GEN SEMICONDUCTOR LLC·Filed 2008·Granted May 25, 2010·5 cites·1 claims
- 2847US2025054827A1Stacked multi-chip structure with enhanced protectionVISHAY GEN SEMICONDUCTOR LLC·Filed 2021·Application pending·0 cites
- 2943US9368584B2Gallium nitride power semiconductor device having a vertical structureVISHAY GEN SEMICONDUCTOR LLC·Filed 2013·Granted Jun 14, 2016·0 cites·17 claims
- 3043US2011084332A1Trench termination structureVISHAY GEN SEMICONDUCTOR LLC·Filed 2009·Application pending·0 cites
- 3143US2025201653A1Enhanced cooling package for improved thermal management for electrical componentsVISHAY GEN SEMICONDUCTOR LLC·Filed 2021·Application pending·0 cites
- 3242US2008036048A1Semiconductor junction device having reduced leakage current and method of forming sameVISHAY GEN SEMICONDUCTOR LLC·Filed 2007·Application pending·0 cites
- 3341US9041188B2Axial semiconductor packageVISHAY GEN SEMICONDUCTOR LLC·Filed 2012·Granted May 26, 2015·0 cites·12 claims
- 3441US8981381B2GaN-based Schottky diode having dual metal, partially recessed electrodeVISHAY GEN SEMICONDUCTOR LLC·Filed 2012·Granted Mar 17, 2015·0 cites·20 claims
- 3541US8981528B2GaN-based Schottky diode having partially recessed anodeVISHAY GEN SEMICONDUCTOR LLC·Filed 2012·Granted Mar 17, 2015·0 cites·20 claims
- 3640US7741703B2Electronic device and lead frameVISHAY GEN SEMICONDUCTOR LLC·Filed 2006·Granted Jun 22, 2010·0 cites·12 claims
- 3734US9178015B2Trench MOS device having a termination structure with multiple field-relaxation trenches for high voltage applicationsVISHAY GEN SEMICONDUCTOR LLC·Filed 2014·Granted Nov 3, 2015·0 cites·18 claims
- 3830US2016293592A1Thin bi-directional transient voltage suppressor (tvs) or zener diodeVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Application pending·0 cites
- 3926US10043676B2Local semiconductor wafer thinningVISHAY GEN SEMICONDUCTOR LLC·Filed 2015·Granted Aug 7, 2018·0 cites·21 claims
Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →