Assignee

WACKER SILTRONIC GES FUR HALBLE

DE·1 granted patent·3 citations·filing 2000–2000

Technology mixH10P1 Y10T1

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0142US6579589B1Semiconductor wafer with crystal lattice defects, and process for producing this semiconductor waferWACKER SILTRONIC GES FUR HALBLE·Filed 2000·Granted Jun 17, 2003·3 cites·7 claims

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