Assignee
WAVELORD CO LTD
KR·6 granted patents·29 pending applications·0 citations·filing 2019–2025
Top patents by PatentIndex Score
35 records- 0172US2025287763A1Vertically-laminated microdisplay panel requiring no color filter and manufacturing method thereofWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 0272US2025287753A1Vertically-laminated microdisplay panel requiring no color filter and manufacturing method thereofWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 0372US2025287762A1Vertically stacked micro display panel in which color filter is unnecessary, and manufacturing method thereforWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 0467US2025366258A1Method for manufacturing high-output ultra-violet(uv) led with thin-film chip structure through hot self-split processWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 0566US2025366281A1Mled device having a nano sponge electrode pad for high-precision bonding and manufacturing method of the sameWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 0663US2026068209A1Enhancement-mode gan hemt epitaxy wafer with high qualityWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 0760US2025364332A1Method for manufacturing engineered growth substrate for group iii nitride power device having high-quality nucleation regionWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 0858US12183847B2Method for manufacturing supporting substrate for semiconductor light-emitting deviceWAVELORD CO LTD·Filed 2020·Granted Dec 31, 2024·0 cites·13 claims
- 0958US11552213B2Template for growing group III-nitride semiconductor layer, group III-nitride semiconductor light emitting device, and manufacturing method thereforWAVELORD CO LTD·Filed 2020·Granted Jan 10, 2023·0 cites·10 claims
- 1058US2025336679A1Method for manufacturing sic power semiconductor device using hot self-split processWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1157US2025308890A1Method for manufacturing gan hemt device using hot self-split processWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1257US2024297266A1Method of manufacturing aluminum nitride layerWAVELORD CO LTD·Filed 2022·Application pending·0 cites
- 1357US2026047357A1Method for manufacturing gan hemt power semiconductor epitaxy wafer with high-quality and high-resistance buffer regionWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1456US2025351631A1Epitaxial die and chip die for semiconductor light-emitting device, and manufacturing method thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 1556US2025294925A1Epitaxial die for semiconductor light-emitting device, semiconductor light-emitting device including same, and manufacturing methods thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 1655US2025311346A1Epitaxial wafer for gan hemt with enhanced electrical insulation and manufacturing method thereofWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1754US2025324644A1High-quality gan hemt power semiconductor epitaxy wafer with 3d nitride structure and manufacturing method of the sameWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1854US2025324643A1Gan hemt epitaxial wafer based on aln thick film and manufacturing method of the sameWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 1954US2025324631A1Method for manufacturing gan hemt power semiconductor epitaxial wafers with high-quality gan channel region through growth temperature modulationWAVELORD CO LTD·Filed 2025·Application pending·0 cites
- 2053US2024282883A1Method for manufactuing non-emitting iii-nitride semiconductor stacked structureWAVELORD CO LTD·Filed 2022·Application pending·0 cites
- 2153US2025203899A1Method for manufacturing group 3 nitride semiconductor template using double seed layerWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 2253US2025285860A1Method for manufacturing semiconductor template having group iii metal polar surfaceWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 2352US2025287729A1Method for manufacturing microdisplay panelWAVELORD CO LTD·Filed 2024·Application pending·0 cites
- 2452US2025285859A1Method for manufacturing group 3 nitride semiconductor templateWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2552US2025285922A1Method for manufacturing group iii nitride power semiconductor device using epitaxial diesWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2652US2025287730A1Method for manufacturing semiconductor device using semiconductor growth templateWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2751US2025294839A1Method for manufacturing group 3 nitride semiconductor template and semiconductor template manufactured therebyWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2851US2025294928A1Epitaxial die enabling easy detection of electrical defects, semiconductor light-emitting device using same, and manufacturing methods thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 2951US2025294921A1Method for manufacturing semiconductor light-emitting device having color conversion technology applied theretoWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 3051US2025293025A1Method for manufacturing group iii nitride semiconductor template and semiconductor template manufactured therebyWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 3151US2025287747A1Epitaxial die for semiconductor light-emitting device, semiconductor light-emitting device including same, and manufacturing methods thereofWAVELORD CO LTD·Filed 2023·Application pending·0 cites
- 3250US12107194B2Semiconductor light-emitting deviceWAVELORD CO LTD·Filed 2019·Granted Oct 1, 2024·0 cites·14 claims
- 3348US12389715B2Method for manufacturing semiconductor light-emitting deviceWAVELORD CO LTD·Filed 2020·Granted Aug 12, 2025·0 cites·5 claims
- 3446US12598848B2Method for manufacturing semiconductor light emitting deviceWAVELORD CO LTD·Filed 2021·Granted Apr 7, 2026·0 cites·4 claims
- 3544US12063023B2Method of manufacturing a piezoelectric thin filmWAVELORD CO LTD·Filed 2020·Granted Aug 13, 2024·0 cites·4 claims
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Counts cover granted patents and pending applications in the PatentIndex corpus. How scoring works →